Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.

Abstract: An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.

Abstract: Provided is a computer system and a computerized method to automatically generate the synthetic images that simulate the human activities in a particular environment. The program instructions are input in the form of the natural language. Particular columns are provided in the user interface to allow the user to select desired instruction elements from sets of limited candidates. The instruction elements form the program instructions. The system analyzes the program instructions to obtain the standard predetermined time evaluation codes of the instructions. Parameters not include in the input program instructions are generated automatically. Synthetic images are generated by using the input program instructions and the parameters obtained.