Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.

Abstract: A process for manufacturing a semiconductor device includes the formation of tungsten contact plugs suitable for very small geometry devices. As part of the process a tungsten barrier layer is deposited into vias and covering the walls of the vias by a process of ionized metal plasma deposition. The tungsten layer deposited in this manner provides a barrier layer, adhesion layer, and nucleation layer for the subsequent chemical vapor deposition of tungsten contact plug material. Together the two layers of tungsten form contact plugs having a low resistance even when used in the fabrication of very small geometry devices.

Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.

Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.

Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.

Abstract: The present invention relates to method and apparatus for removing photoresist material from a wafer surface. In particular, the present invention employs a dry strip process to remove photoresist material that remains after conductive material has been etched to form conductive features. The inventive process includes a reactive ion strip process that includes fluorine, which forms salts with conductive material embedded in the photoresist material. The salts are then removed from the wafer surface by dissolving them in a solvent such as deionized water.

Abstract: A high resolution, multi-layer resist for use in microlithography and a method is disclosed. The resist consists of a planarized layer deposited onto a substrate and an active layer, consisting of arsenic sulfide and silver is deposited onto the planarized layer. Irradiation with light, or other source of irradiation causes the silver to ionically diffuse into the arsenic sulfide, thereby creating a non-phase separate ternary chalcogenide glass. Removal of either the reacted or unreacted ternary compound will provide a positive or negative mask which may be used in subsequent processing or left as an intermetal dielectric as part of the underlying circuitry.