Patents by Inventor Shao Yu Lin

Shao Yu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and manufacturing method thereof
    Patent number: 11177430
    Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: November 16, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Ya-Jui Tsou, Zong-You Luo, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang
  • MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210082482
    Abstract: A magnetoresistive memory device includes a plurality of bottom conductive lines, a plurality of top conductive lines, a first memory cell, and a second memory cell. The top conductive lines are over the bottom conductive lines. The first memory cell is between the bottom conductive lines and the top conductive lines and includes a first magnetic tunnel junction (MTJ) stack. The second memory cell is adjacent the first memory cell and between the bottom conductive lines and the top conductive lines. The second memory cell includes a second MTJ stack, and a top surface of the second MTJ stack is higher than a top surface of the first MTJ stack.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 18, 2021
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Zong-You LUO, Ya-Jui TSOU, Chee-Wee LIU, Shao-Yu LIN, Liang-Chor CHUNG, Chih-Lin WANG
  • MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20200395530
    Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.
    Type: Application
    Filed: June 17, 2019
    Publication date: December 17, 2020
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Ya-Jui TSOU, Zong-You LUO, Chee-Wee LIU, Shao-Yu LIN, Liang-Chor CHUNG, Chih-Lin WANG
  • Screen film kit for a tablet or a phone
    Patent number: D715784
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: October 21, 2014
    Inventors: Shao Yu Lin, Qiang Xiong