Abstract: A photovoltaic cell device and a manufacturing method of a template thereof are provided. The manufacturing method of the template of the photovoltaic cell device includes the steps of providing a substrate and a target disposed opposite to each other in a chamber, applying an unbalanced magnetic field, and generating a plasma in the chamber to form a sputtered layer on the substrate. The plasma extends to an area proximate to the substrate due to the unbalanced magnetic field to assist the crystallization of the sputtered layer, so that the sputtered layer has a single crystalline or a single crystalline-like structure.

Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

Abstract: A manufacturing method of a substrate of a photoelectric conversion device includes the following steps. A single crystal silicon wafer is set into a chamber of a machine, wherein a germanium target or a silicon germanium target is disposed in the chamber. Thereafter, a physical vapor deposition process is performed to form a single crystal germanium thin film or a single crystal silicon germanium thin film on the single crystal silicon wafer. The manufacturing method reduces the production cost of substrates of photoelectric conversion devices. Furthermore, another substrate of a photoelectric conversion device is also provided.