Abstract: The present invention relates to a method for producing recombinant human prethrombin-2 protein and having human ?-thrombin activity by the plant-based expression systems.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate, an encapsulant and an electronic component. The encapsulant is disposed over the substrate, and has a first top surface, a second top surface and a first lateral surface extending between the first top surface and the second top surface. A roughness of the first lateral surface is less than or equal to a roughness of the second top surface. The electronic component is disposed over the second top surface of the encapsulant and electrically connected to the substrate.

Abstract: A method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. The method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between an upper portion and a lower portion. The method further includes forming a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, and a difference between the first thickness and the second thickness is at most 10% of the second thickness.

Abstract: A softAP bridge is created to support a mesh network that also works seamlessly with any home Wi-Fi AP routers by using Layer-3 techniques to simulate a Layer-2 bridge. With this softAP bridge, Wi-Fi chipsets with integrated special Wi-Fi MAC Layer-2 mesh network support (e.g., 802.11s), or external gateway hubs, are not required. To accomplish this solution, one of the wireless devices may be designated as a relay device for communicating IPv6 data packets between a home AP router and the remaining wireless devices designated as client devices.

Abstract: A semiconductor device includes a substrate, a first polysilicon structure over a first portion of the substrate, and a first spacer on a sidewall of the first polysilicon structure. The first spacer has a concave corner region between an upper portion and a lower portion. The semiconductor device includes a second polysilicon structure over a second portion of the substrate. The semiconductor device includes a second spacer on a sidewall of the second polysilicon structure. The semiconductor device further includes a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, a difference between the first thickness and the second thickness is at most 10% of the second thickness, and the protective layer exposes a top-most portion of a sidewall of the second spacer.

Abstract: Techniques for establishing connections between user devices and headless devices attempting to connect to networks. A headless device may attempt to connect to an access point that requires interaction with a captive portal webpage for access to a network. However, the headless device my lack a display to present the captive portal webpage. The headless device may establish a connection with a user device using a PAN protocol. The headless device may then receive the captive portal webpage received from the access point, and relay the webpage to the user device using the PAN protocol. A user may use the user device to interact with the captive portal webpage, and the user device may then relay interaction data back to the headless device using the PAN protocol. The headless device may then provide that interaction data to the access point to be provided access to the network.

Abstract: This disclosure describes, in part, techniques for switching between communication channels in order to reduce latency of data transmissions. For instance, an electronic device may establish a first network connection with a network device and second network connection(s) with other electronic device(s). The electronic device may then send data received from the network device to the other electronic device(s). In some circumstances, the electronic device may establish a new network connection with the network device, such as on a different communication channel and/or use a different network band. In such circumstances, the electronic device may use one or more techniques to establish new network connections(s) with the other electronic device(s) in order to reduce the latency it takes to send the data received from the network device to the other electronic device(s).

Abstract: Techniques for establishing communication channels between user devices experiencing network connectivity issues and remote communication systems are described herein. The techniques include the use of a secondary device to act as a proxy, or a “middle man,” to facilitate the communications with the user device. A user device may detect lack of network connectivity, and begin broadcasting advertisement messages that indicate the lack of connectivity. A secondary device may detect the advertisement message, and send a discovery message to a connectivity system indicating that it detected the advertisement message. The connectivity system can provide this information to a remote communication system, and the remote communication system can establish a connection with the secondary device and instruct the secondary device to establish a connection with the user device.

Abstract: A method of forming a semiconductor device includes forming a first layer over a substrate in a deposition chamber with a first deposition cycle and forming a second layer over the substrate in the deposition chamber with a second deposition cycle. The first deposition cycle includes flowing a first process gas over the substrate and flowing a second process gas over the substrate. The second deposition cycle includes flowing a third process gas over the substrate and flowing a fourth process gas over the substrate.

Abstract: A gallium arsenide (GaAs) radio frequency (RF) circuit is disclosed. The GaAs RF circuit includes a power amplifier and a low noise amplifier; a first transmit/receive (TR) switch, coupled to the power amplifier and the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process; and a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process; wherein the GaAs RF circuit is formed within a GaAs die.

Abstract: Technologies directed to Dynamic Frequency Selection (DFS) channel assessment mechanisms are described. A processing device of a first wireless device identifies a channel identifier corresponding to a first operating channel being used by a first radio of the first wireless device to communicate with a first access point (AP) enabled on a radio of a second wireless device. The processing device identifies multiple devices in proximity to the first wireless device using a second radio. The processing device determines an airtime utilization percentage value for each operating channel of the second radio and determines a number of radar events for each DFS channel. The processing device determines a second channel identifier having a fewest number of radar events and selects a second operating channel for a second AP on the second radio, the second channel corresponding to the second operating channel.

Abstract: A bias compensation circuit, coupled to an amplifying transistor, is disclosed. The bias compensation circuit comprises a voltage locking circuit, comprising a first terminal and a second terminal, wherein the first terminal is coupled to a third terminal the amplifying transistor, and the second terminal is coupled to a control terminal of the amplifying transistor; and a first resistor, coupled to the first terminal of the voltage locking circuit; wherein when the voltage locking circuit is conducted, a voltage difference between the first terminal and the second terminal is substantially constant.

Abstract: A bias compensation circuit, coupled to an amplifying circuit, is disclosed. The bias compensation circuit comprises a transistor, comprising a first terminal, a second terminal and a control terminal; a first feedback transistor, comprising a control terminal, coupled to the first terminal of the transistor; a first terminal, coupled to the control terminal of the transistor; and a second terminal; and a second feedback transistor, comprising a control terminal, coupled to the first terminal of the transistor; a first terminal, coupled to the amplifying circuit; and a second terminal; and a first resistor, comprising a first terminal, coupled to the first terminal of the transistor; and a second terminal, configured to receive a first voltage.

Abstract: A gallium arsenide (GaAs) radio frequency (RF) circuit is disclosed. The GaAs RF circuit includes a power amplifier and a low noise amplifier; a first transmit/receive (TR) switch, coupled to the power amplifier and the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process; and a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process; wherein the GaAs RF circuit is formed within a GaAs die.

Abstract: Systems and methods for adaptive information packet transmission are disclosed. For example, one or more backup packets may be generated for a given data packet and a packet-spacing value and/or packet-sending order may be determined based at least in part on packet-loss data and/or other factors. The data packets and backup packets may be sent according to the packet-spacing value and packet-sending order, and feedback data may be provided by the receiving device. The feedback data may be utilized by the sending device to adapt the packet transmission parameters.

Abstract: A semiconductor device includes a substrate, a first polysilicon structure over a first portion of the substrate, and a first spacer on a sidewall of the first polysilicon structure. The first spacer has a concave corner region between an upper portion and a lower portion. The semiconductor device includes a second polysilicon structure over a second portion of the substrate. The semiconductor device includes a second spacer on a sidewall of the second polysilicon structure. The semiconductor device further includes a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, a difference between the first thickness and the second thickness is at most 10% of the second thickness, and the protective layer exposes a top-most portion of a sidewall of the second spacer.

Abstract: A manufacture includes a substrate comprising a first portion and a second portion. The manufacture further includes a first polysilicon structure over the first portion of the substrate. The manufacture further includes a second polysilicon structure over the second portion of the substrate. The manufacture further includes two spacers on opposite sidewalls of the second polysilicon structure, wherein each spacer of the two spacers has a concave corner region between an upper portion and a lower portion. The manufacture further includes a protective layer covering the first portion of the substrate and the first polysilicon structure, the protective layer exposing the second portion of the substrate, the second polysilicon structure, and partially exposing the two spacers.

Abstract: This disclosure describes, in part, techniques for switching between communication channels in order to reduce latency of data transmissions. For instance, an electronic device may establish a first network connection with a network device and second network connection(s) with other electronic device(s). The electronic device may then send data received from the network device to the other electronic device(s). In some circumstances, the electronic device may establish a new network connection with the network device, such as on a different communication channel and/or use a different network band. In such circumstances, the electronic device may use one or more techniques to establish new network connections(s) with the other electronic device(s) in order to reduce the latency it takes to send the data received from the network device to the other electronic device(s).

Abstract: A semiconductor device package includes a carrier, an electronic component, a package body and a ring structure. The electronic component is disposed on the carrier. The electronic component has a side surface. The package body is disposed on the carrier. The package body exposes at least a portion of the side surface of the electronic component. The ring structure is disposed on the package body and surrounds the portion of the side surface of the electronic component exposed from the package body.

Abstract: Technology for indoor location estimation of wireless stations is described. In one embodiment, a processing device identifies a plurality of wireless stations that support a signal round-trip-time measurement protocol. The processing device associates the plurality of wireless stations with one another to form a logical grouping of the plurality of wireless stations and provides an indication of the plurality of wireless stations in the logical grouping to each of the plurality of wireless stations. The processing device receives a first round-trip-time measurement value for a signal transmitted between a first wireless station and a second wireless station of the logical grouping and a second round-trip-time measurement value for a signal transmitted between the first wireless station and a third wireless station of the logical grouping. These round-trip-time measurement values indicate a distance between the wireless stations, respectively.