Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.

Abstract: A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers.

Abstract: A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

Abstract: A wafer containing a plurality of electro-optical devices, each device being enclosed in chamber that has a translucent cover. An X-Y matrix of pairs of interconnections on the wafer are connected to the circuitry of the electro-optical devices for addressing the electro-optical devices. The pairs of interconnections extend outside of the chambers enclosing the devices to testing areas on the periphery of the wafer. Testing is done by signals applied through the interconnections while simultaneously exposing the devices to light through the translucent covers.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.

Abstract: A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V compound layers.

Abstract: A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

Abstract: A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

Abstract: A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers.

Abstract: A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.

Abstract: A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

Abstract: A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.

Abstract: A display system includes a coherent light source that can emit a coherent light beam, an optical component that can direct the coherent light beam to a spatial light modulator, a transport mechanism that can move the optical component to produce a movement in the coherent light beam, and a spatial light modulator having a two-dimensional array of mirrors each configured to selectively reflect the coherent light beam either toward a screen surface or away from the screen surface to form a display pixel on the screen surface. A display image is formed on the display screen by display pixels produced by the mirrors that reflect the coherent light beam toward the screen surface.

Abstract: A method for fabricating a micro structure includes disposing a sacrificial material in a recess formed in a lower layer and forming a layer of compensatory material on the sacrificial material in the recess. The compensatory material is higher than the upper surface of the lower layer. A first portion of the compensatory material is removed to form a substantially flat surface on the sacrificial material. The substantially flat surface is substantially co-planar with the upper surface of the lower layer. An upper layer is formed on the lower layer and the substantially flat surface.

Abstract: An integrated circuit device, which can be a light emission device such as a light emitting diode (LED), comprises a substrate, a plurality of device layers formed on a first surface of the substrate, including a first device layer and a second device layer, a first electrode formed on the first device layer, and a second electrode formed on a second surface of the substrate which is parallel and opposite to the first surface of the substrate. A plurality of substantially identical such devices can formed on a semiconductor wafer, where one or both of the first and second electrodes are shared by the plurality of devices prior to dicing the wafer. All of the devices can be tested simultaneously on the wafer, prior to dicing. Formation of the electrodes on opposite sides of the substrate allow the device to be directly connected to a mounting substrate, without any wire bonding.