Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in such order from the first surface to the second surface. The active layer includes a quantum well structure having multiple periodic units each of which includes a well layer and a barrier layer disposed sequentially in such order. A bandgap of the barrier layer is greater than that of the well layer, and the bandgaps of the barrier layers gradually increase in a direction from the first surface of the semiconductor epitaxial structure to the second surface of the semiconductor epitaxial structure.

Abstract: A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.

Abstract: A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within a projection of the active layer. The projection of the roughened portion has a projected area not greater than that of the active layer. A micro light emitting device and a display are also disclosed.

Abstract: A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

Abstract: A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.

Abstract: A light emitting diode includes a semiconductor layer sequence stack, a reflective polarizing layer and a diffuse reflection structure. The semiconductor layer sequence stack includes first and second semiconductor layers, and a light emitting layer disposed therebetween. The reflective polarizing layer is disposed on the semiconductor layer sequence stack. The diffuse reflection structure is disposed on the light emitting layer opposite to the reflective polarizing layer. A light emitting device including the light emitting diode, and a projector including the light emitting device are also provided.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A light-emitting diode includes an epitaxial layered structure, a reflective layered unit, and a light-transmissive structure. The epitaxial layered structure has opposite upper and lower surfaces and a side surface interconnecting the upper and lower surfaces. The reflective layered unit is disposed on the lower surface of the epitaxial layered structure. The light-transmissive structure covers the upper surface of the epitaxial layered structure and a portion of the side surface of the epitaxial layered structure, and is configured to allow light emitted from the epitaxial layered structure to exit therefrom at a light-exit angle of not smaller than 125°.

Abstract: A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.

Abstract: A standard cell circuit includes a standard cell unit and a first resistive device. The standard cell unit is coupled to at least one resistor. The first resistive device is coupled to the standard cell unit and provides a first current path for a first current to flow through.

Abstract: A light emitting device of the invention includes a substrate, an electrode connection layer, and at least one epitaxial structure. The substrate has an upper surface and a plurality of electrode pads disposed on the upper surface. The electrode connection layer is disposed on the upper surface of the substrate and electrically connected to the plurality of electrode pads. The electrode connection layer has at least one first electrode, at least one second electrode and at least one connection layer disposed between the substrate and the at least one first electrode and disposed between the substrate and the at least one second electrode. The at least one connection layer has at least one buffer region exposed on the upper surface of the substrate and being an empty gap. The at least one epitaxial structure is disposed on and electrically connected to the electrode connection layer.

Abstract: A light emitting device includes a substrate, a conductive electrode connection layer, at least one epitaxial structure and an insulating layer. The substrate had an upper surface and a lower surface opposite to each other. The conductive electrode connection layer is disposed on the upper surface of the substrate and electrically connected with the substrate. The epitaxial structure is disposed on the conductive electrode connection layer and electrically connected with the conductive electrode connection layer, wherein the epitaxial structure has a first peripheral surface. The insulating layer is disposed between the conductive electrode connection layer and the least one epitaxial structure, wherein the insulating layer has a second peripheral surface, and the second peripheral surface is aligned with the first peripheral surface.

Abstract: A light emitting device of the invention includes a substrate, an electrode connection layer, and at least one epitaxial structure. The substrate has an upper surface and a plurality of electrode pads disposed on the upper surface. The electrode connection layer is disposed on the upper surface of the substrate and electrically connected to the plurality of electrode pads. The electrode connection layer has at least one first electrode, at least one second electrode and at least one connection layer disposed between the substrate and the at least one first electrode and disposed between the substrate and the at least one second electrode. The at least one connection layer has at least one buffer region exposed on the upper surface of the substrate and being an empty gap. The at least one epitaxial structure is disposed on and electrically connected to the electrode connection layer.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate and has at least one first electrode, at least one second electrode and a connection layer which has at least one buffer region. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: A light emitting device includes a substrate, a conductive electrode connection layer, at least one epitaxial structure and an insulating layer. The substrate had an upper surface and a lower surface opposite to each other. The conductive electrode connection layer is disposed on the upper surface of the substrate and electrically connected with the substrate. The epitaxial structure is disposed on the conductive electrode connection layer and electrically connected with the conductive electrode connection layer, wherein the epitaxial structure has a first peripheral surface. The insulating layer is disposed between the conductive electrode connection layer and the least one epitaxial structure, wherein the insulating layer has a second peripheral surface, and the second peripheral surface is aligned with the first peripheral surface.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate, and connects with the conductive through holes. An edge of the electrode connection layer is aligned with an edge of the substrate. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: An electrode structure of a light emitting device includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes electrically contact with the light emitting device and are separated from one other. The second electrodes electrically contact with the light emitting device and are located at the same side with the first electrodes. The second electrodes are separated from one other, and the second electrodes have at least two different profiles when viewing from atop.