Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: A method of preventing HIV-1 associated dendritic pathology in a brain cell, comprising contacting the cell with a therapeutically effective dose of a mitochondrial ATP-sensitive potassium channel agonist. A method of preventing HIV-1 associated dendritic pathology in a brain cell, comprising contacting the cell with a therapeutically effective dose of an inhibitor of succinate dehydrogenase. A method of preventing HIV-1 associated dendritic pathology in a brain cell, comprising contacting the cell with a therapeutically effective dose of a stimulator of production of reactive oxygen species. A model for the study of HIV-1 associated dendritic pathology, comprising a) contacting a hippocampal slice with platelet-activating factor; and b) stimulating the hippocampal slice of a) with high frequency stimulation.