Patents by Inventor Shaopeng Sun
Shaopeng Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240141462Abstract: A method for smelting low-phosphorus high-manganese steel based on reduction dephosphorization of ferromanganese is provided in the present application, relating to the technical field of high-manganese steel smelting, where the dephosphorization of ferromanganese is carried out under reducing atmosphere conditions through mediate-frequency induction furnace to obtain molten ferromanganese with lower phosphorus content, which is subsequently mixed with low phosphorus molten steel obtained by smelting in oxidative period of electric arc furnace in LF ladle refining furnace to make the Mn content of steel reach the requirement of high-manganese steel, and smelting is carried out under the condition of reducing atmosphere by adjusting the composition and temperature of the molten steel to meet the requirements of the target composition of the steel grade before tapping the steel.Type: ApplicationFiled: October 26, 2023Publication date: May 2, 2024Inventors: Tao LI, Wei LIU, Chen CHEN, Fucheng ZHANG, Min TAN, Shaopeng GU, Lin ZHANG, Qian MENG, Degang WEI, Yuhan SUN, Guangbei ZHU, Aihua ZHAO
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Publication number: 20230407467Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: ApplicationFiled: September 6, 2023Publication date: December 21, 2023Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Patent number: 11846018Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: GrantFiled: February 7, 2022Date of Patent: December 19, 2023Assignee: MacDermid Enthone Inc.Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Patent number: 11807951Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.Type: GrantFiled: November 11, 2021Date of Patent: November 7, 2023Assignee: MacDermid Enthone Inc.Inventors: Shaopeng Sun, Kyle Whitten, Stephan Braye, Elie Najjar
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Patent number: 11434578Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.Type: GrantFiled: April 1, 2021Date of Patent: September 6, 2022Assignee: MacDermid Enthone Inc.Inventors: John Commander, Vincent Paneccasio, Jr., Eric Rouya, Kyle Whitten, Shaopeng Sun, Jianwen Han
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Publication number: 20220259724Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: ApplicationFiled: February 7, 2022Publication date: August 18, 2022Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Patent number: 11401618Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: GrantFiled: April 5, 2021Date of Patent: August 2, 2022Assignee: MacDermid Enthone Inc.Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, Jr., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
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Publication number: 20220136123Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.Type: ApplicationFiled: November 11, 2021Publication date: May 5, 2022Inventors: Shaopeng Sun, Kyle Whitten, Stephan Braye, Elie Najjar
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Publication number: 20220064811Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.Type: ApplicationFiled: January 31, 2020Publication date: March 3, 2022Inventors: Eric Yakobson, Shaopeng Sun, Elie Najjar, Thomas Richardson, Vincent Paneccasio, Jr., Wenbo Shao, Kyle Whitten
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Patent number: 11230778Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.Type: GrantFiled: December 13, 2019Date of Patent: January 25, 2022Assignee: MacDermid Enthone Inc.Inventors: Shaopeng Sun, Kyle Whitten, Stephan Braye, Elie Najjar
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Publication number: 20210332491Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: ApplicationFiled: April 5, 2021Publication date: October 28, 2021Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, JR., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
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Publication number: 20210222314Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.Type: ApplicationFiled: April 1, 2021Publication date: July 22, 2021Inventors: John Commander, Vincent Paneccasio, JR., Eric Rouya, Kyle Whitten, Shaopeng Sun, Jianwen Han
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Publication number: 20210180200Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.Type: ApplicationFiled: December 13, 2019Publication date: June 17, 2021Inventors: Shaopeng Sun, Kyle Whitten, Stephan Braye, Elie Najjar
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Patent number: 11035048Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: GrantFiled: July 5, 2017Date of Patent: June 15, 2021Assignee: MacDermid Enthone Inc.Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, Jr., Shaopeng Sun, Eric Yakobson, Jianwen Han, Elie Najjar
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Patent number: 10995417Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.Type: GrantFiled: June 30, 2016Date of Patent: May 4, 2021Assignee: MacDermid Enthone Inc.Inventors: John Commander, Vincent Paneccasio, Jr., Eric Rouya, Kyle Whitten, Shaopeng Sun, Jianwen Han
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Publication number: 20200040478Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.Type: ApplicationFiled: June 30, 2016Publication date: February 6, 2020Inventors: John Commander, Vincent Paneccasio, Jr., Eric Rouya, Kyle Whitten, Shaopeng Sun
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Publication number: 20190010624Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.Type: ApplicationFiled: July 5, 2017Publication date: January 10, 2019Inventors: John Commander, Kyle Whitten, Vincent Paneccasio, JR., Shaopeng Sun, Eric Yakobson