Abstract: A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.

Abstract: A differentiated sensor includes a pair of magnetic layers having magnetization directions that are substantially antiparallel in a quiescent state. At least one of the magnetic layers is a free layer. A spacer layer is disposed between the pair of magnetic layers.

Abstract: A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.

Abstract: An anti-ferromagnetically coupled, granular-continuous (“AFC-GC”) magnetic recording medium having increased thermal stability, writability, and signal-to-medium noise ratio (“SMNR”), comprising a layer stack including, in sequence from a surface of a non-magnetic substrate: (a) a continuous ferromagnetic stabilizing layer; (b) a non-magnetic spacer layer; and (c) a granular ferromagnetic recording layer; wherein: (i) the continuous ferromagnetic stabilizing and granular ferromagnetic recording layers are anti-ferromagnetically coupled across the non-magnetic spacer layer, the amount of anti-ferromagnetic coupling preselected to ensure magnetic relaxation after writing; (ii) lateral interactions in the granular, ferromagnetic recording layer are substantially completely eliminated or suppressed; and (iii) the exchange coupling strength in the continuous, ferromagnetic stabilizing layer is preselected to be slightly larger than the strength of the anti-ferromagnetic coupling provided by the non-magnetic spacer

Abstract: A transducing head has a main pole and at least one magnetic element (such as a return pole or a shield) which provides a potential return path for a magnetic field produced by the main pole. The magnetic element is spaced from the main pole. The magnetic element is formed at least in part of a magnetic material having a material property that reduces side writing at the magnetic element.

Abstract: A transducing head has a main pole and at least one magnetic element (such as a return pole or a shield) which provides a potential return path for a magnetic field produced by the main pole. The magnetic element is spaced from the main pole. The magnetic element has a first edge closest to the main pole and a second edge furthest from the main pole. Permeability of the magnetic element increases from the first edge to the second edge.

Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

Abstract: A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

Abstract: A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

Abstract: A microactuating suspension assembly used for a disc drive is disclosed. The microactuating suspension assembly has a suspension load beam and a microactuator placed on the suspension load beam for bending the suspension load beam at the front end thereof during a sustained period of data read/write time and thus achieving a desired average fly-height which is different from an unaltered average fly-height which would have been achieved without the microactuator. In particular, the microactuating suspension assembly can be used to achieve a very low fly-height. Additionally, very large bandwidth and very short seeking time is made possible when a bimorph piezoelectric microactuator is used.

Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

Abstract: This invention presents a method and system for fabricating a dual GMR read head, which possess a pseudo spin valve structure. The spin valve structure includes a first thick Co-alloy based reference layer with first and second surfaces. The structure includes a first spacer layer including a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first free layer. The structure also includes a second spacer layer including a first surface separated from the second surface of the first free layer and a second surface contacting a first surface of a second thick Co-alloy layer. The thickness of the first and second thick Co-based alloy can be approximately between 30 and 55 Å.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

Abstract: MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

Abstract: A low noise, high areal recording density, perpendicular magnetic recording medium, comprises: (a) a non-magnetic substrate having a surface with a layer stack formed thereon, the layer stack comprising, in overlying sequence from the substrate surface: (b) a soft magnetic underlayer comprised of a soft magnetic multilayer superlattice structure; and (c) a perpendicularly anisotropic, hard magnetic recording layer. Embodiments of the invention include providing the soft magnetic multilayer superlattice structure in the form of n stacked soft magnetic/non-magnetic layer pairs, where n is an integer between about 2 and about 9.