Patents by Inventor Shaoren Deng
Shaoren Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11965238Abstract: Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.Type: GrantFiled: March 31, 2020Date of Patent: April 23, 2024Assignee: ASM IP Holding B.V.Inventors: Andrea Illiberi, Michael Eugene Givens, Shaoren Deng, Giuseppe Alessio Verni
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Publication number: 20240076775Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.Type: ApplicationFiled: April 19, 2023Publication date: March 7, 2024Inventors: Andrea Illiberi, Giuseppe Alessio Verni, Shaoren Deng, Daniele Chiappe, Eva Tois, Marko Tuominen, Michael Givens
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Patent number: 11915929Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.Type: GrantFiled: July 26, 2022Date of Patent: February 27, 2024Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Shaoren Deng, Jan Willem Maes
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Patent number: 11898240Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.Type: GrantFiled: March 29, 2021Date of Patent: February 13, 2024Assignee: ASM IP Holding B.V.Inventors: Andrea Illiberi, Giuseppe Alessio Verni, Shaoren Deng, Daniele Chiappe, Eva Tois, Marko Tuominen, Michael Givens
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Publication number: 20240047197Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie, Viljami J. Pore
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Publication number: 20230386934Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.Type: ApplicationFiled: May 23, 2023Publication date: November 30, 2023Inventors: Shaoren Deng, Marko Tuominen, Vincent Vandalon, Eva E. Tois, Viraj Madhiwala, YongGyu Han, Daniele Chiappe, Michael Givens, Ren-Jie Chang, Giuseppe Alessio Verni, Timothee Blanquart, René Henricus Jozef Vervuurt
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Patent number: 11830732Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: GrantFiled: September 9, 2021Date of Patent: November 28, 2023Assignee: ASM IP Holding B.V.Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie, Viljami Pore
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Publication number: 20230227965Abstract: The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.Type: ApplicationFiled: January 12, 2023Publication date: July 20, 2023Inventors: Shaoren Deng, David Kurt de Roest, Vincent Vandalon, Anirudhan Chandrasekaran, YongGyu Han, Marko Tuominen
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Publication number: 20230178371Abstract: The disclosure relates to methods of depositing an etch-stop layer on a patterned hard mask is disclosed. The method comprises providing a substrate comprising the patterned hard mask in a reaction chamber, selectively depositing passivation material on the first material; and selectively depositing an etch-stop layer on the on the second material. The patterned hard mask comprises a first material and a second material, and the second material forms partially the surface of the substrate. The disclosure further relates to a semiconductor structure, to a device and to a deposition assembly.Type: ApplicationFiled: December 2, 2022Publication date: June 8, 2023Inventors: Shaoren Deng, David Kurt De Roest, Marko Tuominen
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Patent number: 11643720Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.Type: GrantFiled: March 29, 2021Date of Patent: May 9, 2023Assignee: ASM IP HOLDING B.V.Inventors: Andrea Illiberi, Giuseppe Alessio Verni, Shaoren Deng, Daniele Chiappe, Eva Tois, Marko Tuominen, Michael Givens
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Publication number: 20230140812Abstract: The present disclosure relates to methods and apparatuses for selectively depositing silicon and oxygen-comprising material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising providing a substrate in a reaction chamber; providing a metal or metalloid catalyst to the reaction chamber in a vapor phase; providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and providing an oxygen precursor comprising oxygen and hydrogen into the reaction chamber in vapor phase to form silicon and oxygen-comprising material on the first surface. The disclosure further relates to vapor deposition assemblies.Type: ApplicationFiled: October 27, 2022Publication date: May 4, 2023Inventors: Daniele Chiappe, Eva Tois, Viraj Madhiwala, Marko Tuominen, Anirudhan Chandrasekaran, Andrea Illiberi, Shaoren Deng, Charles Dezelah, Vincent Vandalon, YongGyu Han, Michael Givens
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Publication number: 20230139917Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.Type: ApplicationFiled: October 27, 2022Publication date: May 4, 2023Inventors: Eva Tois, Viraj Madhiwala, Daniele Chiappe, Marko Tuominen, Shaoren Deng, Anirudhan Chandrasekaran, YongGuy Han, Michael Givens, Andrea Illiberi, Vincent Vandalon
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Publication number: 20230140367Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.Type: ApplicationFiled: October 27, 2022Publication date: May 4, 2023Inventors: Viraj Madhiwala, Daniele Chiappe, Eva Tois, Marko Tuominen, Charles Dezelah, Shaoren Deng, Anirudhan Chandrasekaran, YongGyu Han, Michael Givens, Andrea llliberi, Vincent Vandalon
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Publication number: 20230098114Abstract: The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.Type: ApplicationFiled: September 29, 2022Publication date: March 30, 2023Inventors: Eva Tois, Daniele Chiappe, Marko Tuominen, Viraj Madhiwala, Charles Dezelah, YongGyu Han, Anirudhan Chandrasekaran, Shaoren Deng
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Publication number: 20220367185Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.Type: ApplicationFiled: July 26, 2022Publication date: November 17, 2022Inventors: Delphine Longrie, Shaoren Deng, Jan Willem Maes
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Patent number: 11450529Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.Type: GrantFiled: November 12, 2020Date of Patent: September 20, 2022Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Shaoren Deng, Jan Willem Maes
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Publication number: 20220208542Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: ApplicationFiled: September 9, 2021Publication date: June 30, 2022Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie
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Publication number: 20220181163Abstract: The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.Type: ApplicationFiled: December 6, 2021Publication date: June 9, 2022Inventors: Andrea Illiberi, Varun Sharma, Michael Givens, Marko Tuominen, Shaoren Deng
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Publication number: 20220068634Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.Type: ApplicationFiled: August 20, 2021Publication date: March 3, 2022Inventors: Shaoren Deng, Andrea Illiberi, Daniele Chiappe, Eva Tois, Giuseppe Alessio Verni, Michael Givens, Varun Sharma, Chiyu Zhu, Shinya Iwashita, Charles Dezelah, Viraj Madhiwala, Jan Willem Maes, Marko Tuominen, Anirudhan Chandrasekaran
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Publication number: 20210358739Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.Type: ApplicationFiled: July 29, 2021Publication date: November 18, 2021Inventors: Eva E. Tois, Suvi P. Haukka, Raija H. Matero, Elina Färm, Delphine Longrie, Hidemi Suemori, Jan Willem Maes, Marko Tuominen, Shaoren Deng, Ivo Johannes Raaijmakers, Andrea Illiberi