Patents by Inventor Shao-Wei Lin

Shao-Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating blind via structure of substrate
    Patent number: 8037586
    Abstract: A method for fabricating a blind via structure of a substrate is provided. First, a substrate is provided, which includes a conductive layer, a metal layer, and a dielectric layer disposed between the conductive layer and the metal layer. Next, a cover layer is formed on the conductive layer. Finally, the substrate formed with the cover layer is irradiated by a laser beam to form at least one blind via structure extending from the cover layer to the metal layer. The blind via structure includes a first opening, a second opening, and a third opening linking to one another. The first opening passes through the cover layer. The second opening passes through the conductive layer. The third opening passes through the dielectric layer. For example, a size of the first opening is greater than a size of the second opening and a size of the third opening.
    Type: Grant
    Filed: October 28, 2008
    Date of Patent: October 18, 2011
    Assignee: Unimicron Technology Corp.
    Inventors: Wei-Ming Cheng, Shao-Wei Lin, Pao-Chin Chen
  • METHOD FOR FABRICATING BLIND VIA STRUCTURE OF SUBSTRATE
    Publication number: 20100031502
    Abstract: A method for fabricating a blind via structure of a substrate is provided. First, a substrate is provided, which includes a conductive layer, a metal layer, and a dielectric layer disposed between the conductive layer and the metal layer. Next, a cover layer is formed on the conductive layer. Finally, the substrate formed with the cover layer is irradiated by a laser beam to form at least one blind via structure extending from the cover layer to the metal layer. The blind via structure includes a first opening, a second opening, and a third opening linking to one another. The first opening passes through the cover layer. The second opening passes through the conductive layer. The third opening passes through the dielectric layer. For example, a size of the first opening is greater than a size of the second opening and a size of the third opening.
    Type: Application
    Filed: October 28, 2008
    Publication date: February 11, 2010
    Applicant: UNIMICRON TECHNOLOGY CORP.
    Inventors: Wei-Ming Cheng, Shao-Wei Lin, Pao-Chin Chen