Abstract: A sensor and its fabrication method are provided, wherein the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a top gate TFT. The photodiode sensing device includes: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line.

Abstract: A method for fabricating a sensor, comprising: forming a pattern of a bias line on a base substrate by using a first patterning process; forming a pattern of a transparent electrode, a pattern of a photodiode, a pattern of a receive electrode, a pattern of a source electrode, a pattern of a drain electrode, a pattern of a data line and a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer, a pattern of a first passivation layer, a pattern of a gate electrode and a pattern of a gate line by using a third patterning process. The above method reduces the number of used mask in the fabrication processes as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the yield rate.

Abstract: An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.

Abstract: A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process.

Abstract: Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.

Abstract: Embodiments of the disclosure provide a signal line fabrication method, an array substrate fabrication method, an array substrate and a display device. The signal line fabrication method includes: sequentially forming a material layer for forming the signal line, a material layer for forming a first barrier layer and a material layer for forming a second barrier layer; forming the first barrier layer and the second barrier layer by a patterning process; and forming the signal line by a patterning process.

Abstract: A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.

Abstract: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.

Abstract: An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.

Abstract: A method for fabricating a sensor, comprises: forming, on a base substrate, a pattern of a data line (31), a pattern of a drain electrode (34), a pattern of a source electrode (33), a pattern of a receive electrode (39), a pattern of a photodiode (40) and a pattern of a transparent electrode (41); forming a pattern of an ohmic layer by using a first patterning process; forming a pattern of an active layer by using a second patterning process; forming a pattern of a gate insulating layer by using a third patterning process; and forming a pattern of a gate line (30), a pattern of a gate electrode (38) and a pattern of a bias electrode (42) by using a fourth patterning process. Such a method can reduce the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

Abstract: A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein: the TFT device is a top gate TFT; the photodiode sensing device includes: a bias electrode and a bias electrode pin connected with the bias electrode, both of which are disposed on the base substrate; a photodiode disposed on the bias electrode and a transparent electrode disposed on the photodiode and connected with the source electrode.

Abstract: A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process.

Abstract: A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.

Abstract: Embodiments of the invention disclose a sensor and its fabrication method, the sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a bottom gate TFT; the photodiode sensing device comprises: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line.

Abstract: An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

Abstract: A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.

Abstract: A method for fabricating a sensor, comprises: forming, on a base substrate, a pattern of a data line (31), a pattern of a drain electrode (34), a pattern of a source electrode (33), a pattern of a receive electrode (39), a pattern of a photodiode (40) and a pattern of a transparent electrode (41); forming a pattern of an ohmic layer by using a first patterning process; forming a pattern of an active layer by using a second patterning process; forming a pattern of a gate insulating layer by using a third patterning process; and forming a pattern of a gate line (30), a pattern of a gate electrode (38) and a pattern of a bias electrode (42) by using a fourth patterning process. Such a method can reduce the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

Abstract: A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process

Abstract: A sensor and its fabrication method are provided, the sensor comprises: a base substrate (32), a group of gate lines (30) and a group of data lines (31) arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines (30) and the group of data lines (31), each sensing element comprising a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes (33, 34) are positioned between the active layer (36) and the gate electrode (38). The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.