Abstract: The present disclosure provides a TFT, an array substrate and a fabricating method thereof and a display device. The TFT includes a gate, an active layer, a first electrode and a second electrode, the first electrode is arranged at one side of the active layer, the second electrode is arranged at the other side of the active layer, the first electrode, the active layer and the second electrode forms a stacked structure, the gate is arranged to surround the stacked structure, and the gate and the stacked structure are insulated and separated from each other. Under fixed occupation area, the conductive channel of the TFT of the present disclosure has increased width, so drain current in saturation region is increased without impacting aperture ratio of a display panel, which further optimizes performance of the TFT and the array substrate, and improves display effect of the display device.

Abstract: The present disclosure provides a TFT, an array substrate and a fabricating method thereof and a display device. The TFT includes a gate, an active layer, a first electrode and a second electrode, the first electrode is arranged at one side of the active layer, the second electrode is arranged at the other side of the active layer, the first electrode, the active layer and the second electrode forms a stacked structure, the gate is arranged to surround the stacked structure, and the gate and the stacked structure are insulated and separated from each other. Under fixed occupation area, the conductive channel of the TFT of the present disclosure has increased width, so drain current in saturation region is increased without impacting aperture ratio of a display panel, which further optimizes performance of the TFT and the array substrate, and improves display effect of the display device.

Abstract: A fan-out line arrangement, a display panel and a manufacture method thereof are provided. The fan-out line arrangement provided by the present disclosure includes a plurality of fan-out lines having different lengths, wherein each of the fan-out lines includes a wiring layer; a supplementary conductive film is disposed on the wiring layer of each of at least some of the fan-out lines and electrically connected to the wiring layer; and the plurality of fan-out lines have the same impedance.

Abstract: The present disclosure provides a TFT, an array substrate and a fabricating method thereof and a display device. The TFT includes a gate, an active layer, a first electrode and a second electrode, the first electrode is arranged at one side of the active layer, the second electrode is arranged at the other side of the active layer, the first electrode, the active layer and the second electrode forms a stacked structure, the gate is arranged to surround the stacked structure, and the gate and the stacked structure are insulated and separated from each other. Under fixed occupation area, the conductive channel of the TFT of the present disclosure has increased width, so drain current in saturation region is increased without impacting aperture ratio of a display panel, which further optimizes performance of the TFT and the array substrate, and improves display effect of the display device.

Abstract: The present disclosure provides a TFT, an array substrate and a fabricating method thereof and a display device. The TFT includes a gate, an active layer, a first electrode and a second electrode, the first electrode is arranged at one side of the active layer, the second electrode is arranged at the other side of the active layer, the first electrode, the active layer and the second electrode forms a stacked structure, the gate is arranged to surround the stacked structure, and the gate and the stacked structure are insulated and separated from each other. Under fixed occupation area, the conductive channel of the TFT of the present disclosure has increased width, so drain current in saturation region is increased without impacting aperture ratio of a display panel, which further optimizes performance of the TFT and the array substrate, and improves display effect of the display device.

Abstract: The present invention discloses a mask plate and a preparation method thereof. The mask plate comprises a graphic region and a blank region arranged in the periphery of the graphic region, wherein vaporization coating holes are formed in the graphic region, and at least one buffer hole is formed in the blank region.

Abstract: The invention relates to the display technical field, and discloses an electroluminescence device and a production process of the same, and a display apparatus. The electroluminescence device comprises a first electrode and a second electrode disposed oppositely, and a light-emitting layer situated between the first electrode and the second electrode, wherein the light-emitting layer comprises: nanowires of a first conducting type, which are situated on the first electrode and distributed in an array; a covering layer of a second conducting type, which covers the nanowires and is electrically connected to the second electrode. In the technical solution of the invention, since the nanowire has a diameter of only a few dozens of nanometers, which is much less than the wavelength of the emitted light, the light can pass through it and go out directly, substantially without the problem of refraction.

Abstract: The invention relates to the display technical field, and discloses an electroluminescence device and a production process of the same, and a display apparatus. The electroluminescence device comprises a first electrode and a second electrode disposed oppositely, and a light-emitting layer situated between the first electrode and the second electrode, wherein the light-emitting layer comprises: nanowires of a first conducting type, which are situated on the first electrode and distributed in an array; a covering layer of a second conducting type, which covers the nanowires and is electrically connected to the second electrode. In the technical solution of the invention, since the nanowire has a diameter of only a few dozens of nanometers, which is much less than the wavelength of the emitted light, the light can pass through it and go out directly, substantially without the problem of refraction.