Patents by Inventor Shara S. Shoup

Shara S. Shoup has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods
    Patent number: 7351449
    Abstract: Flame produced vapors for combustion chemical vapor deposition are redirected from the direction of the flame by differential atmospheric pressure, such as positive pressure provided by a blower or negative pressure provided by a vacuum. This allows, for example, lower surface temperatures of substrates being coated with flame-produced vapors and coating of interior surfaces.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: April 1, 2008
    Assignee: n Gimat Co.
    Inventors: Andrew T. Hunt, Girish N. Deshpande, Tzyy-Jiuan Jan Hwang, Nii Sowa Laye, Miodrag Oljaca, Subramaniam Shanmugham, Shara S. Shoup, Trifon Tomov, William J. Dalzell, Jr., Aimee Poda, Michelle Hendrick
  • Processing line having means to monitor crystallographic orientation
    Publication number: 20030021885
    Abstract: Apparatus for continuously moving a substrate and coating the substrate with a crystalline coating has at least one means for monitoring the crystalline orientation of the coating, either continuously or periodically.
    Type: Application
    Filed: July 15, 2002
    Publication date: January 30, 2003
    Inventors: Shara S Shoup, Andrew T Hunt
  • Formation of thin film resistors
    Patent number: 6500350
    Abstract: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: December 31, 2002
    Assignee: Morton International, Inc.
    Inventors: Andrew T. Hunt, Wen-Yi Lin, Shara S. Shoup, Richard W. Carpenter, Stephen E. Bottomley, Tzyy Jiuan Hwang, Michelle Hendrick
  • Resistors for electronic packaging
    Patent number: 6396387
    Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.
    Type: Grant
    Filed: April 13, 1999
    Date of Patent: May 28, 2002
    Assignee: MicroCoating Technologies, Inc.
    Inventors: Andrew T. Hunt, Wen-Yi Lin, Shara S. Shoup
  • Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods
    Publication number: 20020058143
    Abstract: Flame produced vapors for combustion chemical vapor deposition are redirected from the direction of the flame by differential atmospheric pressure, such as positive pressure provided by a blower or negative pressure provided by a vacuum. This allows, for example, lower surface temperatures of substrates being coated with flame-produced vapors and coating of interior surfaces.
    Type: Application
    Filed: December 21, 2000
    Publication date: May 16, 2002
    Inventors: Andrew T. Hunt, Girish N. Deshpande, Tzyy-Jiuan Jan Hwang, Nii Sowa Laye, Miodrag Oljaca, Subramaniam Shanmugham, Shara S. Shoup, Trifon Tomov, William J. Dalzell, Aimee Poda, Michelle Hendrick
  • Formation of thin film resistors
    Patent number: 6329899
    Abstract: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.
    Type: Grant
    Filed: November 24, 1998
    Date of Patent: December 11, 2001
    Assignee: Microcoating Technologies, Inc.
    Inventors: Andrew T. Hunt, Wen-Yi Lin, Shara S. Shoup, Richard W. Carpenter, Stephen E. Bottomley, Tzyy Jiuan Hwang, Michelle Hendrick
  • Buffer layers on biaxially textured metal substrates
    Patent number: 6235402
    Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.
    Type: Grant
    Filed: February 11, 1999
    Date of Patent: May 22, 2001
    Assignee: UT-Battelle, LLC
    Inventors: Shara S. Shoup, Mariappan Paranthamam, David B. Beach, Donald M. Kroeger, Amit Goyal
  • Deposition of resistor materials directly on insulating substrates
    Patent number: 6210592
    Abstract: Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.
    Type: Grant
    Filed: April 29, 1998
    Date of Patent: April 3, 2001
    Assignee: Morton International, Inc.
    Inventors: Andrew T. Hunt, Wen-Yi Lin, Shara S. Shoup, Richard W. Carpenter
  • Resistors for electronic packaging
    Patent number: 6208234
    Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.
    Type: Grant
    Filed: April 29, 1998
    Date of Patent: March 27, 2001
    Assignee: Morton International
    Inventors: Andrew T. Hunt, Wen-Yi Lin, Shara S. Shoup
  • Precursor solution compositions for electronic devices using CCVD
    Patent number: 6193911
    Abstract: Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.
    Type: Grant
    Filed: April 29, 1998
    Date of Patent: February 27, 2001
    Assignee: Morton International Incorporated
    Inventors: Andrew T. Hunt, Tzyy Jiuan Hwang, Helmut G. Hornis, Hong Shao, Joe Thomas, Wen-Yi Lin, Shara S. Shoup, Henry A. Luten, John Eric McEntyre
  • Sol-gel deposition of buffer layers on biaxially textured metal substances
    Patent number: 6077344
    Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.
    Type: Grant
    Filed: September 2, 1997
    Date of Patent: June 20, 2000
    Assignee: Lockheed Martin Energy Research Corporation
    Inventors: Shara S. Shoup, Mariappan Paranthamam, David B. Beach, Donald M. Kroeger, Amit Goyal