Patents by Inventor Sharad Yedave

Sharad Yedave has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cleaning of semiconductor processing systems
    Patent number: 8603252
    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.
    Type: Grant
    Filed: April 26, 2007
    Date of Patent: December 10, 2013
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank Dimeo, James Dietz, W. Karl Olander, Robert Kaim, Steven Bishop, Jeffrey W. Neuner, Jose Arno, Paul J. Marganski, Joseph D. Sweeney, David Eldridge, Sharad Yedave, Oleg Byl, Gregory T. Stauf
  • CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    Publication number: 20100154835
    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.
    Type: Application
    Filed: April 26, 2007
    Publication date: June 24, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Frank Dimeo, James Dietz, Karl W. Olander, Robert Kaim, Steven Bishop, Jeffrey W. Neuner, Jose Arno, Paul J. Marganski, Joseph D. Sweeney, David Eldridge, Sharad Yedave, Oleg Byl, Gregory T. Stauf