Abstract: An ion source that is capable of different modes of operation is disclosed. A vaporizer is in communication with the ion source. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as an inert gas, while heating the vaporizer. When operating in a second mode, the ion source may supply a second gas, which may be an organoaluminium gas. When operating in a third mode, the ion source may supply the second gas, while heating the vaporizer. Ions having single charges may be created in the first and second modes, while ions having multiple charges may be created in the third mode.

Abstract: An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. A solid target is also disposed in the arc chamber. When the insertable target holder is used, multicharged ions are created. When the insertable target holder is retracted, single charged ions are created by only etching the solid dopant-containing compound.

Abstract: An ion source that is capable of different modes of operation is disclosed. A solid target may be disposed in the arc chamber. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may supply an organoaluminium gas. Ions having single charges may be created in the first mode, while ions having multiple charges may be created in the second mode. In some embodiments, the solid target may be retractable.

Abstract: An ion source that is capable of different modes of operation is disclosed. A vaporizer is in communication with the ion source. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as an inert gas, while heating the vaporizer. When operating in a second mode, the ion source may supply a second gas, which may be an organoaluminium gas. When operating in a third mode, the ion source may supply the second gas, while heating the vaporizer. Ions having single charges may be created in the first and second modes, while ions having multiple charges may be created in the third mode.

Abstract: An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. The ion source may have several gas inlets. When the insertable target holder is used, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may utilize an organoaluminium gas.

Abstract: An ion source that is capable of different modes of operation is disclosed. A solid target may be disposed in the arc chamber. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may supply an organoaluminium gas. Ions having single charges may be created in the first mode, while ions having multiple charges may be created in the second mode. In some embodiments, the solid target may be retractable.

Abstract: An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. A solid target is also disposed in the arc chamber. When the insertable target holder is used, multicharged ions are created. When the insertable target holder is retracted, single charged ions are created by only etching the solid dopant-containing compound.

Abstract: A rotary union that includes a heated ferrofluid seal is disclosed. The rotary union includes an inner rotating shaft, an intermediate rotating shaft and an outer rotating shaft. The inner rotating shaft is hollow to allow the flow of cryogenic fluid in one direction. The inner rotating shaft and the intermediate shaft are spaced apart to create a channel for the return of the cryogenic fluid. The intermediate rotating shaft is separated from the outer rotating shaft by a gap so as to reduce thermal conductivity. In this way, the temperature of the outer rotating shaft is greater than the temperature of the cryogenic fluid. A heated ferrofluid seal is disposed between the outer rotating shaft and the housing.

Abstract: A rotary union that includes a heated ferrofluid seal is disclosed. The rotary union includes an inner rotating shaft, an intermediate rotating shaft and an outer rotating shaft. The inner rotating shaft is hollow to allow the flow of cryogenic fluid in one direction. The inner rotating shaft and the intermediate shaft are spaced apart to create a channel for the return of the cryogenic fluid. The intermediate rotating shaft is separated from the outer rotating shaft by a gap so as to reduce thermal conductivity. In this way, the temperature of the outer rotating shaft is greater than the temperature of the cryogenic fluid. A heated ferrofluid seal is disposed between the outer rotating shaft and the housing.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.