Patents by Inventor Shari N. Farrens

Shari N. Farrens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6780759
    Abstract: A method and technique for achieving a high strength bond between two substrates includes igniting a plasma using a source RF signal. The substrates are biased with a bias RF signal during surface treatment by the plasma. The treated surfaces are brought into contact. The resulting bonded substrates show an improvement over bonds attained using conventional bonding techniques.
    Type: Grant
    Filed: October 1, 2001
    Date of Patent: August 24, 2004
    Assignee: Silicon Genesis Corporation
    Inventors: Shari N. Farrens, Mark A. Franklin, William J. Franklin, Wei Liu
  • Publication number: 20030003684
    Abstract: A method and apparatus for achieving a high strength bond between two substrates includes igniting a plasma using a source RF signal. The substrates are biased with a bias RF signal during surface treatment by the plasma. The treated surfaces are brought into contact. The resulting bonded substrates show an improvement over bonds attained using conventional bonding techniques.
    Type: Application
    Filed: October 1, 2001
    Publication date: January 2, 2003
    Applicant: Silicon Genesis Corporation
    Inventors: Shari N. Farrens, Mark A. Franklin, William J. Franklin, Wei Liu