Abstract: In one aspect, a radiation detector is disclosed, which includes a substrate having a plurality of microcapillary channels, and a crystalline scintillator material disposed in said channels so as to generate a plurality of independent radiation sensing elements associated with each channel for detecting incident radiation and generating an optical radiation in response to the detection of the incident radiation. In some embodiments, the incident radiation can include any of alpha (?), beta (?), gamma (?), X-ray and neutrons.

Abstract: In one aspect, a radiation detector is disclosed, which includes a substrate having a plurality of microcapillary channels, and a crystalline scintillator material disposed in said channels so as to generate a plurality of independent radiation sensing elements associated with each channel for detecting incident radiation and generating an optical radiation in response to the detection of the incident radiation. In some embodiments, the incident radiation can include any of alpha (?), beta (?), gamma (?), X-ray and neutrons.

Abstract: A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: A composite scintillator includes a matrix material and pieces of at least one scintillator material embedded in the matrix material. The scintillator material is (a) inorganic single-crystalline or ceramic, (b) organic plastic, or (c) glassy; and the embedded scintillator material scintillates in response to at least one of gamma-ray and neutron irradiation.

Abstract: A composite scintillator includes a matrix material and pieces of at least one scintillator material embedded in the matrix material. The scintillator material is (a) inorganic single-crystalline or ceramic, (b) organic plastic, or (c) glassy; and the embedded scintillator material scintillates in response to at least one of gamma-ray and neutron irradiation.

Abstract: An alloy semiconductor can be grown using a container including a lower section containing a composition-control source material and an upper section containing a solid. The composition-control source material is heated to produce a vapor, and the solid charge is melted to form a melt with a melt meniscus extending to an inner surface of the container. The vaporized composition-control source material flows from the lower section to the upper and contacts the melt meniscus. The melt is then cooled to form a crystal.

Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.

Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.

Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.

Abstract: A method of heating an optical member includes providing the optical member, directing heat from a heat source toward the optical member, and distributing the heat about the optical member through a high-thermal-conductivity apparatus disposed between the heat source and the optical member such that a surface of the apparatus defining a volume for receiving the optical member will have a substantially uniform temperature.

Abstract: A system for heating optical members includes a thermally-conductive inner housing defining an interior volume for receiving an optical member to be heated, a thermally-insulative outer housing at least partially containing the thermally-conductive inner housing, and a heating structure disposed outside the inner housing and configured to provide heat through the thermally-conductive inner housing and into the interior volume defined by the inner housing.

Abstract: A system for heating optical members includes a thermally-conductive inner housing defining an interior volume for receiving an optical member to be heated, a thermally-insulative outer housing at least partially containing the thermally-conductive inner housing, and a heating structure disposed outside the inner housing and configured to provide heat through the thermally-conductive inner housing and into the interior volume defined by the inner housing.

Abstract: A system for heating optical members includes a thermally-conductive inner housing defining an interior volume for receiving an optical member to be heated, a thermally-insulative outer housing at least partially containing the thermally-conductive inner housing, and a heating structure disposed outside the inner housing and configured to provide heat through the thermally-conductive inner housing and into the interior volume defined by the inner housing.