Patents by Inventor Sharon Bar-Lev Shefi

Sharon Bar-Lev Shefi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11550070
    Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: January 10, 2023
    Assignee: Technion Research and Development Foundation Ltd.
    Inventors: Yael Nemirovsky, Sharon Bar-Lev Shefi, Igor Brouk
  • Publication number: 20220003885
    Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.
    Type: Application
    Filed: July 2, 2021
    Publication date: January 6, 2022
    Applicant: Technion Research and Development Foundation Ltd.
    Inventors: Yael Nemirovsky, Sharon Bar-Lev Shefi, |gor Brouk
  • Patent number: 8779543
    Abstract: A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.
    Type: Grant
    Filed: September 16, 2012
    Date of Patent: July 15, 2014
    Assignee: Technion Research and Development Foundation Ltd.
    Inventors: Yael Nemirovsky, Vitali Savuskan, Sharon Bar-Lev Shefi, Igor Brouk, Gil Visokolov, Amos Fenigstein, Tomer Leitner
  • Publication number: 20140151581
    Abstract: A TeraHertz radiating system that may include a blackbody arranged to emit blackbody radiation that comprises a TeraHertz component, a visible light component and an infrared component; and a filtering module that is arranged to pass the TeraHertz component and to reject the visible light component and the infrared component to provide filtered radiation.
    Type: Application
    Filed: December 2, 2013
    Publication date: June 5, 2014
    Inventors: Yael Nemirovsky, Dan Corcos, Gabriel Peled, Alexander Svetlitza, Sharon Bar-Lev-Shefi
  • Publication number: 20130099091
    Abstract: A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.
    Type: Application
    Filed: September 16, 2012
    Publication date: April 25, 2013
    Inventors: Yael Nemirovsky, Vitali Savuskan, Sharon Bar-Lev Shefi, Igor Brouk, Gil Visokolov, Amos Fenigstein, Tomer Leitner