Abstract: A memory module with any combination of driver line terminators, power supply circuits, and components integral to a memory control subsystem mounted directly on the memory module for use with high speed, impedance-controlled memory buses. The memory module may be formed on a conventional printed circuit card with unpacked or packed memory chips attached directly to the memory module. Including the additional functionality directly on the memory modules improves the EMC/EMI performance as well as signal quality and integrity, thereby enhancing the memory subsystem performance. Such designs may also eliminate the need for bus exit connections, thereby allowing the freed-up connection capacity to be used to address additional memory capacity on the module. Another embodiment features a module with the additional features but without memory devices.

Abstract: The present invention provides a memory module with any combination of driver line terminators, power supply circuits, and components integral to a memory control subsystem mounted directly on the memory module for use with high speed, impedance-controlled memory buses. The memory module may be formed on a conventional printed circuit card with unpacked or packed memory chips attached directly to the memory module. Including the additional functionality directly on the memory modules improves the EMC/EMI performance as well as signal quality and integrity, thereby enhancing the memory subsystem performance. Such designs may also eliminate the need for bus exit connections, thereby allowing the freed-up connection capacity to be used to address additional memory capacity on the module. Another embodiment features a module with the additional features but without memory devices.

Abstract: The present invention is a family of memory modules. In one embodiment a memory module with granularity, upgradeability, and high throughput of at least 4.2 gigabytes per second using two channels of RAMBUS memory devices in a typical volume of just 2.2 inches by 1.1 inches by 0.39 inch. Each module includes an impedance-controlled substrate having contact pads, memory devices and other components, including optional driver line terminators, on its surfaces. The inclusion of spaced, multiple area array interconnections allows a row of memory devices to be serially mounted between each of the area array interconnections, thereby minimizing the interconnect lengths and facilitating matching of interconnect lengths. Short area array interconnections, including BGA, PGA, and LGA options or interchangeable alternative connectors provide interconnections between the modules and the rest of the system.

Abstract: The present invention is a family of memory modules. In one embodiment a memory module with granularity, upgradability, and a capacity of two gigabytes uses 256 MB SDRAM or DDR SDRAM memory devices in CSPs in a volume of just 4.54 inches by 2.83 inches by 0.39 inch. Each module includes an impedance-controlled substrate having contact pads, memory devices, and other components, including optional driver line terminators, on its surfaces. The inclusion of spaced, multiple area array interconnections allows memory devices to be symmetrically mounted on each side of each of the area array interconnections, thereby reducing the interconnect lengths and facilitating the matching of interconnect lengths. Short area array interconnections, including BGA, PGA, and LGA options or interchangeable alternative connectors provide interconnections between the modules and the rest of the system. Thermal control structures may be included to maintain the memory devices within a reliable range of operating temperatures.