Patents by Inventor Sharon Swee Ling BANH

Sharon Swee Ling BANH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250006221
    Abstract: The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.
    Type: Application
    Filed: August 3, 2023
    Publication date: January 2, 2025
    Applicant: Western Digital Technologies, Inc.
    Inventors: Quang LE, Xiaoyong LIU, Cherngye HWANG, Brian R. YORK, Son T. LE, Sharon Swee Ling BANH, Maki MAEDA, Fan TUO, Yu TAO, Hisashi TAKANO, Nam Hai PHAM
  • Publication number: 20240420733
    Abstract: The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.
    Type: Application
    Filed: June 11, 2024
    Publication date: December 19, 2024
    Applicant: Western Digital Technologies, Inc.
    Inventors: Quang LE, Brian R. YORK, Sharon Swee Ling BANH, Hassan OSMAN, Hisashi TAKANO