Abstract: The present disclosure relates to an antiviral thin film layer that may include a metallic material. The antiviral thin film layer may have a VLT of at least about 60%. The antiviral thin film layer may further have an influenza A subtype H1N1 antiviral rating (H1N1 antiviral rating) of not greater than about 360 minutes, where the H1N1 antiviral rating is defined as the amount of time required for H1N1 viral activity on a surface of the metallic layer to drop from an initial test concentration placed on the surface of the thin film layer to less than 25.0% of the initial concentration placed on the surface as measured using ISO21702.

Abstract: A method for modifying an electrical characteristic of a transparent conductive oxide (TCO) material. Material is exposed to chosen ambient conditions (including presence of one of forming gas, air, and vacuum) and irradiating with laser radiation under pre-determined conditions. As a result of irradiating, an annealed TCO is formed having a surface characterized by at least one of i) a root-mean-square roughness of 4.5 nm or lower; ii) a grain size of 8.5 nm or greater, and iii) a sheet resistance value of 2.59 Ohms per square or lower. The process of irradiating includes formation of an annealed TCO material in absence of ablating such material.