Abstract: A hybrid dual match line circuit may include a hit match line coupled to a first group of load devices and a miss match line coupled to discharge through a second group of load devices. Both the hit and miss match lines may be configured to be precharged to an asserted state. Each of the second group of load devices may be activated for discharging by a respective miss signal. The hit match line may be additionally coupled to discharge through first and second discharge path respectively activated for discharging in response to a hit signal and a read/write enable signal. The hit and miss match lines may be electrically isolated from one another, such that when one or more of the respective miss signals are asserted, current from the hit match line does not discharge through the miss match line.

Abstract: A hybrid dual match line circuit may include a hit match line coupled to a first group of load devices and a miss match line coupled to discharge through a second group of load devices. Both the hit and miss match lines may be configured to be precharged to an asserted state. Each of the second group of load devices may be activated for discharging by a respective miss signal. The hit match line may be additionally coupled to discharge through first and second discharge path respectively activated for discharging in response to a hit signal and a read/write enable signal. The hit and miss match lines may be electrically isolated from one another, such that when one or more of the respective miss signals are asserted, current from the hit match line does not discharge through the miss match line.

Abstract: Dual match line circuits having race condition improvements. A dual match line circuit may include precharge logic configured to precharge each of a hit match line, a miss match line and an evaluate node to an asserted state, where a coupling device couples the hit and miss match lines to the evaluate node. The miss match line may discharge through a number of load devices that may be activated by respective miss signals. A positive feedback circuit coupled to the miss match line may accelerate its discharge. The hit match line may be additionally coupled to discharge through a discharge path. The hit and miss match lines may be electrically isolated from one another, such that when any of the respective miss signals is asserted, current from the hit match line does not discharge through the miss match line.

Abstract: A dual match line circuit may include precharge logic configured to precharge each of a hit match line, a miss match line and an evaluate node to an asserted state, where a coupling device couples the hit and miss match lines to the evaluate node. The miss match line may discharge through a number of load devices that may be activated by respective miss signals. The hit match line may be additionally coupled to discharge through a pair of devices connected in series, one of which may be activated by a hit signal, and the other of which may be activated by the miss match line. The hit and miss match lines may be electrically isolated from one another, such that when any of the respective miss signals is asserted, current from the hit match line does not discharge through the miss match line.

Abstract: A system and method for self-calibration of the strobe timing of the sense-amplifiers of a RAM array. In one method example, the timing of two sense amplifiers used to read the bit-lines of the RAM array is controlled by a Delay Locked Loop circuit (DLL). The timing of a first sense-amplifier strobe is reduced until the sense amplifier fails. The second sense amplifier has adequate timing margin however and is used to actually read the RAM bit-lines. Once the RAM read fails with the first sense amplifier, the DLL lengthens the strobe timing. Once the minimum threshold is set, the second sense amplifier will always read the correct data because of a built-in timing margin between the first and second amplifier. Thus the system constantly optimizes the RAM array read timing with each read cycle even though the minimal time varies.

Abstract: A system and method for self-calibration of the strobe timing of the sense-amplifiers of a RAM array. In one method example, the timing of two sense amplifiers used to read the bit-lines of the RAM array is controlled by a Delay Locked Loop circuit (DLL). The timing of a first sense-amplifier strobe is reduced until the sense amplifier fails. The second sense amplifier has adequate timing margin however and is used to actually read the RAM bit-lines. Once the RAM read fails with the first sense amplifier, the DLL lengthens the strobe timing. Once the minimum threshold is set, the second sense amplifier will always read the correct data because of a built-in timing margin between the first and second amplifier. Thus the system constantly optimizes the RAM array read timing with each read cycle even though the minimal time varies.