Abstract: This is an electronic storage array used in data processing systems for the storage of information in the form of binary bits. The storage is fabricated in integrated circuit form, typically on a semiconductor chip, each storage cell being contained within a single isolated zone formed in the semiconductor chip. Each storage cell is DC stable and operates on a conductivity modulation principle, i.e. a cell conducts when it stores a binary "1" and the conductive state is maintained by conductivity modulation of an element of the cell, and the cell is non-conducting when storing a binary "0". In its most basic form, each cell includes at least two resistors formed in series in a P type semiconductor region. At least one of the resistors, formed in a lightly doped portion of the P type region, is a variable resistor having both high and low values of resistance. The high value of resistance is changed to a low value of resistance by injecting electrons from a proximate N type semiconductor region.