Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the workpiece such that the second metal feature is electrically coupled to the first metal feature; patterning the second metal feature to form a first trench adjacent to the first metal feature; depositing a blocking layer over the workpiece, wherein the blocking layer selectively attaches to the first ILD layer; depositing a barrier layer over the workpiece, wherein the barrier layer selectively forms over the second metal feature relative to the first ILD layer; and depositing a second ILD layer over the workpiece.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling a conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.

Abstract: Disclosed herein is a particulate filter for use in an emission treatment system of an internal combustion engine. The particulate filter provides high fresh filtration efficiency and has minimal to no impact on backpressures.

Abstract: The present invention relates to a particulate filter, in particular a particulate filter for use in an emission treatment system of an internal combustion engine. The particulate filter provides an advantageous combination of low back pressure and high fresh filtration efficiency.

Abstract: A catalyst for gasoline engine exhaust gas after-treatment, comprising Pt and optionally at least one other platinum group metal on a hydrothermal stable support material which is coated onto a gasoline particulate filter. The catalyst oxidizes particulate matter trapped in the gasoline particulate filter under low temperature and abates NOx, CO and HC. Also a process for preparing the catalyst is disclosed, and a method for after-treatment of gasoline engine exhaust gas using the catalyst is disclosed.

Abstract: The present invention relates to an exhaust gas purification system comprising two catalytic sub-systems, wherein the first catalytic sub-system is for conversion of NOx, HC, CO and optionally particulate matter, and the second sub-system is for conversion of CO. The second sub-system locates at the downstream of the first catalytic sub-system. An air injection is positioned between the first catalytic sub-system and second catalytic sub-system.

Abstract: A catalyst for gasoline engine exhaust gas after-treatment, comprising Pt and optionally at least one other platinum group metal on a hydrothermal stable support material which is coated onto a gasoline particulate filter. The catalyst oxidizes particulate matter trapped in the gasoline particulate filter under low temperature and abates NOx, CO and HC. Also a process for preparing the catalyst is disclosed, and a method for after-treatment of gasoline engine exhaust gas using the catalyst is disclosed.

Abstract: Provided is a base metal undercoat containing catalyst and an exhaust article containing the catalyst. The catalyst contains a base metal undercoat with an oxygen storage component, and at least one catalytic layer. Also provided are methods for preparing the catalyst and methods for monitoring the oxygen storage capacity of an exhaust article containing the catalyst.

Abstract: Provided are an exhaust treatment catalyst and an exhaust article containing the catalyst. The catalyst comprises: (a) a carrier; (b) a first layer deposited on the carrier, said first layer comprising substantially only at least one refractive metal oxide; (c) a second layer deposited on the first layer, said second layer comprising substantially only at least one oxygen storage component and at least one binder therefor; and (d) a third layer deposited on the second layer, said third layer comprising at least one layer of one or more platinum group metal components supported on a refractory metal oxide support. Optionally, a fourth layer is deposited on the third layer wherein the fourth layer comprises one or more platinum group metal components supported on a refractory metal oxide support. As a further option, an overcoat layer may be deposited on the third or fourth layer wherein the overcoat layer comprises a catalyst poison sorbent.

Abstract: The present invention relates to a layered catalyst composite useful for reducing contaminants in exhaust gas streams, especially gaseous streams containing sulfur oxide contaminants. More specifically, the present invention is concerned with improved catalysts of the type generally referred to as “three-way conversion” catalysts. The layered catalysts trap sulfur oxide contaminants, which tend to poison three-way conversion catalysts used to abate other pollutants in the stream. The layered catalyst composites of the present invention have a sulfur oxide absorbing layer before or above a nitrogen oxide absorbing layer, and/or normal three-way catalytic layers. The layered catalyst composite comprises a first layer and a second layer. The first layer comprises a first support and at least one first platinum component.