Patents by Inventor Shau-Lin Shu

Shau-Lin Shu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Robust diffusion barrier for Cu metallization
    Patent number: 6140231
    Abstract: A new method of forming a stacked tantalum nitride barrier layer to prevent copper diffusion is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A via is opened through the insulating layer to one of the underlying semiconductor device structures. A stacked mode tantalum nitride barrier layer is conformally deposited within the via. A layer of copper is deposited overlying the stacked mode tantalum nitride barrier layer to complete copper metallization in the fabrication of an integrated circuit device. The stacked mode tantalum nitride barrier layer has misaligned grain boundaries. This prevents diffusion of copper into the dielectric layer.
    Type: Grant
    Filed: February 12, 1999
    Date of Patent: October 31, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chung-Shi Lin, Shau-Lin Shu, Chen-Hua Yu