Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N?C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4.

Abstract: A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R1R2R3 (Si))—Co(CO)4 (Formula 1), wherein R1, R2 and R3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.

Abstract: Specific organometallic compounds of Formula I: Qx-Sn-(A1R1?z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.

Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N?C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4.

Abstract: Organometallic compounds useful in chemical phase deposition processes such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Abstract: Organometallic compounds, useful in chemical phase deposition processes, having a structure: [{R1R2R3(A))x-M(CO)y]z, wherein R1, R2 and R3 are selected from H, a lower alkyl group and a phenyl group substituted with at least one selected lower alkyl group, where at least one of R1, R2 and R3 must be other than H; M is selected from cobalt, iron, manganese, and chromium group metals; A is selected from Si, Ge, and Sn; wherein: x=1, y=4, and z=1 when M is selected from a cobalt group metal, x=1, y=5, and z=1 when M is selected from a manganese group metal, x=2, y=4, and z=1 when M is selected from a chromium group metal, and x=2, y=4, and z=1 or, alternatively, x=1, y=4, and z=2 when M is selected from an iron group metal.