Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device includes a substrate having a horizontal main surface and a plurality of pairs of conductive layers over the horizontal main surface. Different ones of the pairs are separated by different vertical distances such that each pair serves as an arcing electrode pair and different ones of the arcing electrode pairs are configured to arc discharge at different voltages.

Abstract: A memory device comprising a memory array including memory cells to store memory data, error correcting code (ECC) circuitry configured to generate ECC data and use the ECC data to detect errors in the memory data, and an ECC circuitry checker. The ECC circuitry checker is configured to substitute the ECC data with check ECC data, compare an output of the ECC circuitry to an expected output when the substituted check ECC data is applied to the ECC circuitry, and generate an alert when the comparing indicates an error in the ECC circuitry.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: A memory device comprising a memory array including memory cells to store memory data, error correcting code (ECC) circuitry configured to generate ECC data and use the ECC data to detect errors in the memory data, and an ECC circuitry checker. The ECC circuitry checker is configured to substitute the ECC data with check ECC data, compare an output of the ECC circuitry to an expected output when the substituted check ECC data is applied to the ECC circuitry, and generate an alert when the comparing indicates an error in the ECC circuitry.