Patents by Inventor Shaunak MUKHERJEE
Shaunak MUKHERJEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230094180Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Applicant: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 11594409Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: GrantFiled: June 16, 2020Date of Patent: February 28, 2023Assignee: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 11393678Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.Type: GrantFiled: August 10, 2020Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
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Patent number: 11289369Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.Type: GrantFiled: June 8, 2020Date of Patent: March 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yi Ding, Shaunak Mukherjee, Bo Xie, Kang Sub Yim, Deenesh Padhi
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Publication number: 20210272800Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.Type: ApplicationFiled: June 16, 2020Publication date: September 2, 2021Applicant: Applied Materials, Inc.Inventors: Shaunak Mukherjee, Kang Sub Yim, Deenesh Padhi, Abhijit A. Kangude, Rahul Rajeev, Shubham Chowdhuri
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Patent number: 11011371Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.Type: GrantFiled: November 16, 2017Date of Patent: May 18, 2021Assignee: Applied Materials, Inc.Inventors: Milind Gadre, Shaunak Mukherjee, Praket P. Jha, Deenesh Padhi, Ziqing Duan, Abhijit B. Mallick
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Publication number: 20210050212Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.Type: ApplicationFiled: August 10, 2020Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
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Publication number: 20200388532Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.Type: ApplicationFiled: June 8, 2020Publication date: December 10, 2020Applicant: Applied Materials, Inc.Inventors: Yi Ding, Shaunak Mukherjee, Bo Xie, Kang Sub Yim, Deenesh Padhi
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Patent number: 10790140Abstract: In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer.Type: GrantFiled: February 6, 2018Date of Patent: September 29, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Xinhai Han, Deenesh Padhi, Masaki Ogata, Yinan Zhang, Shaunak Mukherjee
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Publication number: 20200216959Abstract: Embodiments of the present disclosure generally relate to methods of depositing a conformal layer on surfaces of high aspect ratio structures and related apparatuses for performing these methods. The conformal layers described herein are formed using PECVD methods in which a semiconductor device including a plurality of high aspect ratio features is disposed on a substrate support in a process volume of a process chamber, gases are supplied to the process volume, and a plasma is generated in the process volume by pulsing RF power coupled to the process gases disposed in the process volume of the process chamber.Type: ApplicationFiled: August 20, 2018Publication date: July 9, 2020Applicant: Applied Materials, Inc.Inventors: Shaunak MUKHERJEE, Abhijit B. MALLICK
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Publication number: 20200075321Abstract: Embodiments described herein provide a method of forming a low-k carbon-doped silicon oxide (CDO) layer having a high hardness by a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to a process chamber. A radio frequency (RF) power is applied at a power level and a frequency to the CDO precursor. The CDO layer is deposited on a substrate within the process chamber.Type: ApplicationFiled: August 27, 2019Publication date: March 5, 2020Inventors: Shaunak MUKHERJEE, Bo XIE, Kevin Michael CHO, Kang Sub YIM, Deenesh PADHI, Astha GARG
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Publication number: 20190326110Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.Type: ApplicationFiled: November 16, 2017Publication date: October 24, 2019Inventors: Milind GADRE, Shaunak MUKHERJEE, Praket P. JHA, Deenesh PADHI, Ziqing DUAN, Abhijit B. MALLICK
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Publication number: 20190214228Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.Type: ApplicationFiled: January 10, 2019Publication date: July 11, 2019Inventors: Yihong CHEN, Shaunak MUKHERJEE, Kelvin CHAN, Abhijit Basu MALLICK
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Publication number: 20180233356Abstract: In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer.Type: ApplicationFiled: February 6, 2018Publication date: August 16, 2018Inventors: Xinhai HAN, Deenesh PADHI, Masaki OGATA, Yinan ZHANG, Shaunak MUKHERJEE
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Patent number: 10002757Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.Type: GrantFiled: July 21, 2017Date of Patent: June 19, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Yihong Chen, Kelvin Chan, Shaunak Mukherjee, Abhijit Basu Mallick
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Publication number: 20170323777Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.Type: ApplicationFiled: July 21, 2017Publication date: November 9, 2017Inventors: Yihong CHEN, Kelvin CHAN, Shaunak MUKHERJEE, Abhijit Basu MALLICK
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Patent number: 9741558Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.Type: GrantFiled: November 29, 2016Date of Patent: August 22, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Yihong Chen, Kelvin Chan, Shaunak Mukherjee, Abhijit Basu Mallick
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Publication number: 20170125239Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.Type: ApplicationFiled: November 29, 2016Publication date: May 4, 2017Inventors: Yihong CHEN, Kelvin CHAN, Shaunak MUKHERJEE, Abhijit Basu MALLICK
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Publication number: 20170125241Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.Type: ApplicationFiled: March 18, 2016Publication date: May 4, 2017Inventors: Shaunak MUKHERJEE, Kang Sub YIM, Deenesh PADHI, Kevin M. CHO, Khoi Anh PHAN, Chien-An CHEN, Priyanka DASH
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Patent number: 9508545Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.Type: GrantFiled: December 30, 2015Date of Patent: November 29, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Yihong Chen, Kelvin Chan, Shaunak Mukherjee, Abhijit Basu Mallick