Abstract: Embodiments of the present disclosure generally relate to methods of depositing a conformal layer on surfaces of high aspect ratio structures and related apparatuses for performing these methods. The conformal layers described herein are formed using PECVD methods in which a semiconductor device including a plurality of high aspect ratio features is disposed on a substrate support in a process volume of a process chamber, gases are supplied to the process volume, and a plasma is generated in the process volume by pulsing RF power coupled to the process gases disposed in the process volume of the process chamber.

Abstract: Embodiments described herein provide a method of forming a low-k carbon-doped silicon oxide (CDO) layer having a high hardness by a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to a process chamber. A radio frequency (RF) power is applied at a power level and a frequency to the CDO precursor. The CDO layer is deposited on a substrate within the process chamber.

Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.

Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

Abstract: In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer.

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

Abstract: A method of processing a substrate includes positioning the substrate within a processing zone of a processing chamber and removing an oxide layer from a surface of the substrate by introducing first radicals into the processing zone. The method further includes, after removing the oxide layer, introducing at least one first precursor gas into the processing zone and depositing at least one dielectric layer onto the surface by exposing the at least one first precursor gas to second radicals. After positioning the substrate within the processing zone, the substrate is not removed from the processing chamber until each of removing the oxide layer and depositing the at least one dielectric layer is performed.

Abstract: Embodiments disclosed herein generally include methods for forming porous low k dielectric films. In one embodiment, a method of forming a porous low k dielectric film on a substrate using PECVD and in situ radical curing in a processing chamber is disclosed. The method includes introducing radicals into a processing region of the processing chamber, introducing a gas mixture into the processing region of the processing chamber, forming a plasma in the processing region and depositing the porous low k dielectric film on the substrate.

Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.