Patents by Inventor Shaw-Jang Liou

Shaw-Jang Liou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8076235
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: December 13, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou
  • Publication number: 20110039408
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Application
    Filed: October 27, 2010
    Publication date: February 17, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou
  • Patent number: 7846832
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: December 7, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou
  • Publication number: 20070010085
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Application
    Filed: July 7, 2005
    Publication date: January 11, 2007
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou