Abstract: A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.

Abstract: A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.

Abstract: A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.

Abstract: A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.

Abstract: One embodiment of the invention provides an apparatus for producing a preform. The apparatus includes a lay-up device and a distribution head coupled to the lay-up device. The lay-up device receives tow. The lay-up device has a plurality of sockets. The sockets removably and replaceably engage pins along a perimeter of a desired preform shape. The distribution head distributes tow. The distribution head loops tow around the pins to form the preform.

Abstract: This invention provides a means for establishing and controlling a desired image on a material that is both conformal and flexible by nature. Such materials include paper, textiles, molded plastics, and woven fabric. The invention permits a low cost, effective means for generating both static and dynamic images on these materials while preserving the primary structural and functional attributes of the host material.

Abstract: The invention presents a new methodology to monitor and display the resin flow during fabrication of organic matrix composite laminates in real-time or near real-time and includes data acquisition, remote data distribution, flow analysis and reconstruction, and flow visualization. The data acquisition apparatus is based on SMARTweave technology, as described in U.S. Pat. No. 5,210,499, which provides the location of points on the flow front as a function of time by using voltage measurements. However, the methodology will monitor and display the resin flow if the location and time information is acquired using modified SMARTweave or different apparatus.

Abstract: An apparatus and method for accurately monitoring the flow and cure rate of a resin material. The method is accomplished through the use and incorporation of efficient sensors as integral components of a composite resin structure material. The sensors used are electrically conductive threads arranged in a non-intersecting, grid-like configuration. They may be placed into or between composite resin materials. These sensors serve as leads which are connected to a computer through a multiplexer/rapid switching system and a scanner. The data obtained for the monitoring of the flow and cure of resin is stored on a computer system and is presented on the computers' graphic window.