Patents by Inventor Shawn Robert Gibb

Shawn Robert Gibb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 11015263
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: May 25, 2021
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20200002841
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: July 9, 2019
    Publication date: January 2, 2020
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 10392722
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: August 27, 2019
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • System for growth of large aluminum nitride single crystals with thermal-gradient control
    Patent number: 10106913
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: October 23, 2018
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Shailaja P. Rao, Shawn Robert Gibb, Leo J. Schowalter
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20170350036
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: August 24, 2017
    Publication date: December 7, 2017
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 9771666
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: April 13, 2015
    Date of Patent: September 26, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL
    Publication number: 20170226661
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Application
    Filed: January 20, 2017
    Publication date: August 10, 2017
    Inventors: Robert T. BONDOKOV, Shailaja P. RAO, Shawn Robert GIBB, Leo J. SCHOWALTER
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20150275393
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: April 13, 2015
    Publication date: October 1, 2015
    Inventors: Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
  • Growth of large aluminum nitride single crystals with thermal-gradient control
    Patent number: 9028612
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: May 12, 2015
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Shailaja P. Rao, Shawn Robert Gibb, Leo J. Schowalter
  • GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL
    Publication number: 20120000414
    Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 5, 2012
    Inventors: Robert T. Bondokov, Shailaja P. Rao, Shawn Robert Gibb, Leo J. Schowalter