Abstract: A plurality of signals within a memory sub-system are analyzed by a signal analyzer component. Relevant signals among the plurality of signals are determined by the signal analyzer component such that the relevant signals comprise a subset of signals among the plurality of signals. Information corresponding to the relevant signals is sampled by the signal analyzer component and the signal analyzer component is responsible for extracting the information corresponding to the relevant signals among the plurality of signals.

Abstract: Information corresponding to a health of a memory device or a functional state of the memory device, or both, is written to the memory device. Radio frequency (RF) signaling is used to provide power to certain components of the memory device. Information corresponding to the health of the memory device or the functional state of the memory device, or both, is retrieved from the memory device over-the-air in response to the RF signaling.

Abstract: A plurality of signals within a memory sub-system are analyzed by a signal analyzer component. Relevant signals among the plurality of signals are determined by the signal analyzer component such that the relevant signals comprise a subset of signals among the plurality of signals. Information corresponding to the relevant signals is sampled by the signal analyzer component and the signal analyzer component is responsible for extracting the information corresponding to the relevant signals among the plurality of signals.

Abstract: Information corresponding to a health of a memory device or a functional state of the memory device, or both, is written to the memory device. Radio frequency (RF) signaling is used to provide power to certain components of the memory device. Information corresponding to the health of the memory device or the functional state of the memory device, or both, is retrieved from the memory device over-the-air in response to the RF signaling.

Abstract: A single in-line memory module (SIMM) for memory expansion in a computer system. The SIMM includes a plurality of memory chips surface-mounted on a printed circuit board. The printed circuit board includes a dual read-out connector edge adapted for insertion within a socket of the computer system. One or more driver chips may further be mounted on the printed circuit board and connected to distribute control signals to the memory chips. A full-width data path may further be connected between the dual read-out connector edge and the plurality of memory chips.

Abstract: An apparatus and method for processing display data in multi-pixel sections which also tracks and maps a cursor in single pixel increments is disclosed. A video buffer card receives display data and generates display control data for a multi-pixel section of display frame, and cursor display information including cursor enable information, cursor color selection information, cursor color and blending information, and X and Y cursor location information. Additionally, the current horizontal and vertical location of the multi-pixel section of the display data is tracked and used in combination with the cursor X and Y location information to calculate an offset that is used to replace certain portions of the display data with cursor color information. The video buffer card also supports a blending operation which provides a blend of the cursor foreground and background colors with the displayed image colors.

Abstract: A full width single in-line memory module (SIMM) for dynamic random access memory (DRAM) memory expansions. A printed circuit board having a multiplicity of DRAM memory elements mounted thereto is arranged in a data path having a width of 144 bits. The SIMM further includes on-board drivers to buffer and drive signals in close proximity to the memory elements. In addition, electrically conductive traces are routed on the circuit board to reduce loading and trace capacitance to minimize signal skew to the distributed memory elements. The SIMM further includes a high pin density dual read-out connector structure receiving electrical traces from both sides of the circuit board for enhanced functionality. The SIMM is installed in complementary sockets one SIMM at a time to provide memory expansion in full width increments.

Abstract: A full width single in-line memory module (SIMM) for dynamic random access memory (DRAM) memory expansions is disclosed. A printed circuit board having a multiplicity of DRAM memory elements mounted thereto is arranged in a data path having a width of 144 bits. The SIMM of the present invention further includes on-board drivers to buffer and drive signals in close proximity to the memory elements. In addition, electrically conductive traces are routed on the circuit board in such a manner to reduce loading and trace capacitance to minimize signal skew to the distributed memory elements. The SIMM further includes a high pin density dual readout connector structure receiving electrical traces from both sides of the circuit board for enhanced functionality. The SIMM is installed in complementary sockets one SIMM, at a time to provide memory expansion in full width increments.

Abstract: A full width single in-line memory module (SIMM) for dynamic random access memory (DRAM) memory expansions is disclosed. A printed circuit board having a multiplicity of DRAM memory elements mounted thereto is arranged in a data path having a width of 144 bits. The SIMM of the present invention further includes on-board drivers to buffer and drive signals in close proximity to the memory elements. In addition, electrically conductive traces are routed on the circuit board in such a manner to reduce loading and trace capacitance to minimize signal skew to the distributed memory elements. The SIMM further includes a high pin density dual readout connector structure receiving electrical traces from both sides of the circuit board for enhanced functionality. The SIMM is installed in complementary sockets one SIMM at a time to provide memory expansion in full width increments.

Abstract: A full width single in-line memory module (SIMM) for dynamic random access memory (DRAM) memory expansions is disclosed. A printed circuit board having a multiplicity of DRAM memory elements mounted thereto is arranged in a data path having a width of 144 bits. The SIMM of the present invention further includes on-board drivers to buffer and drive signals in close proximity to the memory elements. In addition, electrically conductive traces are routed on the circuit board in such a manner to reduce loading and trace capacitance to minimize signal skew to the distributed memory elements. The SIMM further includes a high pin density dual read-out connector structure receiving electrical traces from both sides of the circuit board for enhanced functionality. The SIMM is installed in complementary sockets one SIMM at a time to provide memory expansion in full width increments.