Abstract: Disclosed is a slit valve gate. The slit valve gate includes a base portion configured to couple to a slit valve actuator and includes a first angled alignment feature. The slit valve gate further includes a seal portion coupled to the base portion. The seal portion is configured to create an airtight seal between the slit valve gate and a sealing surface of a slit valve opening. The slit valve gate further includes a clamp portion coupled to the base portion. The clamp portion includes a second angled alignment feature configured to interface with the first angled alignment feature of the base portion to align the clamp portion with respect to the base portion. The clamp portion retains the seal portion at least partially between the clamp portion and the base portion.

Abstract: An epitaxial growth processing chamber with a component having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is described. A component configured for use in an epitaxial growth processing chamber having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is also described. The component is a baseplate, an exhaust cap, an injection ring, an injection cap, a lower reflector, an upper reflector, a lower heat shield, an upper heat shield, a cone reflector, or combinations thereof. In some instances, the component may further include an inlet flow port. In some other instances, the component may further include an inlet flow port, outlet flow port and a fluid flow wall, and optionally a fluid flow baffle, and optionally a reflective surface.

Abstract: Embodiments described herein generally relate to highly reflective metallic alloys for components (such as chamber components) of semiconductor processing equipment, and related methods and processing chambers. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body having an internal volume, and one or more heat sources configured to provide heat to the internal volume. The processing chamber includes an upper window and a lower window. The processing chamber includes one or more chamber components positioned to reflect energy emitted from the one or more heat sources through at least one of the upper window or the lower window and into the internal volume, the one or more chamber components comprising a metallic alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less.

Abstract: An epitaxial growth processing chamber has a component that has a macrocell support structure. The macrocell support structure has interconnecting physical supports that define fluidly-connected pores. A component configured for use in an epitaxial growth processing chamber has a macrocell support structure with interconnecting physical supports defining fluidly-connected pores. The component may be one or more of a lower liner, an upper liner, a baseplate, an exhaust cap, an injection ring, and an injection cap. The interconnecting physical supports may comprise a material such as a metal, a ceramic or glass material, a polymeric material, and combinations thereof. The component may have a free-standing configuration, a plate-supported configuration, a sandwich configuration, a surface sealed configuration, and a solid polymer-filled configuration.

Abstract: Disclosed is a slit valve gate. The slit valve gate includes a base portion configured to couple to a slit valve actuator. The slit valve gate further includes a seal portion coupled to the base portion. The seal portion is configured to create an airtight seal between the slit valve gate and a sealing surface of a slit valve opening. The slit valve gate further includes a clamp portion coupled to the base portion. The clamp portion retains the seal portion at least partially between the clamp portion and the base portion.

Abstract: Disclosed is a slit valve gate. The slit valve gate includes a base portion configured to couple to a slit valve actuator. The slit valve gate further includes a seal portion coupled to the base portion. The seal portion is configured to create an airtight seal between the slit valve gate and a sealing surface of a slit valve opening. The slit valve gate further includes a clamp portion coupled to the base portion. The clamp portion retains the seal portion at least partially between the clamp portion and the base portion.

Abstract: Exemplary diagnostic wafers for a semiconductor processing chamber may include a wafer body defining a plurality of recesses. The diagnostic wafers may include at least one data logging puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one battery puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one sensor puck positionable within one of the plurality of recesses.