Abstract: In a chip package (10, 10?, 110, 210), first and second electrical power buses (14, 14?, 16, 16?, 114, 116, 214, 216) are each formed of an electrical conductor having a chip bonding portion (20, 22, 120, 122, 220, 222) and a lead portion (26, 26?, 28, 28?, 126, 128, 226, 228) extending away from the chip bonding portion. The chip bonding portions of the first and second electrical power buses have edges (32, 34, 132, 134, 232, 234) spaced apart from one another to define an extended electrical isolation gap (40, 140, 240). A plurality of chips (42, 44, 46, 142, 143, 144, 145, 146, 147, 148, 242) straddle the extended electrical isolation gap and are electrically connected with the first and second electrical power buses to receive electrical power from the first and second electrical power buses.

Abstract: A light source (10) includes a light emitting semiconductor device (12). A support substrate (14) has a generally planar reflective surface (28) that supports the semiconductor device (12). The light emitting semiconductor device heat sinks via the support substrate. A curved reflector (16) has a concave parabolic reflective surface. The light emitting semiconductor device (12) is arranged between the support substrate (14) and the curved reflector (16). The support substrate (14) and the curved reflector (16) together define a light aperture (18) through which light produced by the light emitting semiconductor device (12) passes.

Abstract: In a method of manufacturing a flip-chip light emitting diode, semiconductor layers (14, 16, 16′, 18, 18′, 20, 20′) that define a light emitting electrical junction (18, 18′) are epitaxially deposited on a principle surface of an epitaxy substrate (12, 12′). A light-emitting device mesa (24, 24′) is formed from the epitaxially deposited semiconductor layers. A first electrode (30, 30′, 54) is formed on a portion of the device mesa distal from the epitaxy substrate. The first electrode electrically contacts the device mesa. A second electrode (32, 32′, 56) is disposed on the principle surface of the substrate. First and second electrodes are flip-chip bonded to bonding pads (40, 40′, 42, 42′). The epitaxy substrate is removed. An electrically conductive, light-transmissive window layer (14, 14′) is arranged over the device mesa and the second electrode.

Abstract: A light source (10) includes a light emitting semiconductor device (12). A support substrate (14) has a generally planar reflective surface (28) that supports the semiconductor device (12). The light emitting semiconductor device heat sinks via the support substrate. A curved reflector (16) has a concave parabolic reflective surface. The light emitting semiconductor device (12) is arranged between the support substrate (14) and the curved reflector (16). The support substrate (14) and the curved reflector (16) together define a light aperture (18) through which light produced by the light emitting semiconductor device (12) passes.