Abstract: A method of manufacturing an electronic device is provided. The method includes forming a dielectric layer on a Si-based substrate, etching away portions of the dielectric layer to form a crisscrossing grid pattern of remaining portions of the dielectric layer and to expose the substrate in areas where the dielectric layer is removed, forming GaN-based layers on the substrate in growth areas between sidewalls of the remaining portions of the dielectric layer, and forming a semiconductor device on the GaN-based layers.

Abstract: An approach to forming a full color micro-display that includes using a plurality of micro-light emitting diodes formed in a silicon on insulator substrate, where the plurality of micro-light emitting diodes include a plurality of red micro-light emitting diodes, a plurality of green micro-light emitting diodes, and a plurality of blue micro-light emitting diodes. Additionally, the approach includes forming a plurality of transistor devices in the silicon on insulator substrate, wherein each transistor device of the plurality of transistor devices acts as a switch connecting to a micro-light emitting diode of the plurality of micro-light emitting diodes.