Patents by Inventor Shawn-Yu Lin
Shawn-Yu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230261124Abstract: A high absorption photovoltaic material and method of making the material for use in a solar cell are disclosed. The photovoltaic material includes a surface modified with a layer of repeating photonic crystal structures. The photonic crystal structures are approximately inverse conically shaped and have a curved sidewall that has an approximately Gaussian shape. The photonic crystal structures generally have a high vertical depth and sidewall angle. The structures also have a gradient refractive index profile and exhibit the parallel-to-interface refraction light trapping effect. An anti-reflective coating is disposed over the photonic crystal structure layer. The photovoltaic material exhibits near unity light absorption over a broad range of visible and near infrared wavelengths and incidence angles, even at reduced thicknesses.Type: ApplicationFiled: April 20, 2023Publication date: August 17, 2023Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Ping KUANG, Shawn Yu LIN, Anthony POST, Sajeev Oommen JOHN, Sergey Leonidovich EYDERMAN, Mei-Li HSIEH
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Patent number: 11658253Abstract: A high absorption photovoltaic material and method of making the material for use in a solar cell are disclosed. The photovoltaic material includes a surface modified with a layer of repeating photonic crystal structures. The photonic crystal structures are approximately inverse conically shaped and have a curved sidewall that has an approximately Gaussian shape. The photonic crystal structures generally have a high vertical depth and sidewall angle. The structures also have a gradient refractive index profile and exhibit the parallel-to-interface refraction light trapping effect. An anti-reflective coating is disposed over the photonic crystal structure layer. The photovoltaic material exhibits near unity light absorption over a broad range of visible and near infrared wavelengths and incidence angles, even at reduced thicknesses.Type: GrantFiled: November 18, 2020Date of Patent: May 23, 2023Assignee: Rensselaer Polytechnic InstituteInventors: Ping Kuang, Shawn Yu Lin, Anthony Post, Sajeev Oommen John, Sergey Leonidovich Eyderman, Mei-Li Hsieh
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Patent number: 11088291Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.Type: GrantFiled: July 22, 2016Date of Patent: August 10, 2021Assignee: Rensselaer Polytechnic InstituteInventors: Sameer Chhajed, Jong Kyu Kim, Shawn-Yu Lin, Mei-Ling Kuo, Frank W. Mont, David J. Poxson, E. Fred Schubert, Martin F. Schubert
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Publication number: 20210074867Abstract: A high absorption photovoltaic material and method of making the material for use in a solar cell are disclosed. The photovoltaic material includes a surface modified with a layer of repeating photonic crystal structures. The photonic crystal structures are approximately inverse conically shaped and have a curved sidewall that has an approximately Gaussian shape. The photonic crystal structures generally have a high vertical depth and sidewall angle. The structures also have a gradient refractive index profile and exhibit the parallel-to-interface refraction light trapping effect. An anti-reflective coating is disposed over the photonic crystal structure layer. The photovoltaic material exhibits near unity light absorption over a broad range of visible and near infrared wavelengths and incidence angles, even at reduced thicknesses.Type: ApplicationFiled: November 18, 2020Publication date: March 11, 2021Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Ping KUANG, Shawn Yu LIN, Anthony POST, Sajeev Oommen JOHN, Sergey Leonidovich EYDERMAN, Mei-Li HSIEH
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Publication number: 20190140115Abstract: A high absorption photovoltaic material and method of making the material for use in a solar cell are disclosed. The photovoltaic material includes a surface modified with a layer of repeating photonic crystal structures. The photonic crystal structures are approximately inverse conically shaped and have a curved sidewall that has an approximately Gaussian shape. The photonic crystal structures generally have a high vertical depth and sidewall angle. The structures also have a gradient refractive index profile and exhibit the parallel-to-interface refraction light trapping effect. An anti-reflective coating is disposed over the photonic crystal structure layer. The photovoltaic material exhibits near unity light absorption over a broad range of visible and near infrared wavelengths and incidence angles, even at reduced thicknesses.Type: ApplicationFiled: May 8, 2017Publication date: May 9, 2019Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Ping KUANG, Shawn Yu LIN, Anthony POST, Sajeev Oommen JOHN, Sergey Leonidovich EYDERMAN, Mei-Li HSIEH
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Publication number: 20170084760Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.Type: ApplicationFiled: July 22, 2016Publication date: March 23, 2017Applicant: Rensselaer Polytechnic InstituteInventors: Sameer Chhajed, Jong Kyu Kim, Shawn-Yu Lin, Mei-Ling Kuo, Frank W. Mont, David J. Poxson, E. Fred Schubert, Martin F. Schubert
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Patent number: 9362460Abstract: The invention is directed to an integrated polarized light emitting diode device that has a light emitting diode, a metal grating, an oxide layer, and a built-in photonic crystal rotator. Additional teachings include a method for making the integrated polarized light emitting diode, a method for improving the polarization selectivity and energy efficiency of a light emitting diode, and a method for rotating polarization of a light emitting diode.Type: GrantFiled: July 19, 2011Date of Patent: June 7, 2016Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Shawn-Yu Lin, Yong Sung Kim, Mei-Li Hsieh
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Patent number: 8987016Abstract: The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency.Type: GrantFiled: August 16, 2011Date of Patent: March 24, 2015Assignee: Rensselaer Polytechnic InstituteInventors: Mei-Ling Kuo, Shawn-Yu Lin, Yong Sung Kim, Mei-Li Hsieh
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Publication number: 20130221323Abstract: The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency.Type: ApplicationFiled: August 16, 2011Publication date: August 29, 2013Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Mei-Ling Kuo, Shawn-Yu Lin, Yong-Sung Kim, Mei-Li Hsieh
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Publication number: 20130161677Abstract: The invention is directed to an integrated polarized light emitting diode device that has a light emitting diode, a metal grating, an oxide layer, and a built-in photonic crystal rotator. Additional teachings include a method for making the integrated polarized light emitting diode, a method for improving the polarization selectivity and energy efficiency of a light emitting diode, and a method for rotating polarization of a light emitting diode.Type: ApplicationFiled: July 19, 2011Publication date: June 27, 2013Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Shawn-Yu Lin, Yong Sung Kim, Mei-Li Hsieh
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Publication number: 20110120554Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.Type: ApplicationFiled: March 27, 2009Publication date: May 26, 2011Inventors: Sameer Chhajed, Jong Kyu Kim, Shawn-Yu Lin, Mei-Ling Kuo, Frank W. Mont, David J. Poxson, E. Fred Schubert, Martin F. Schubert
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Publication number: 20090126783Abstract: An optical absorber includes vertically aligned carbon nanotubes with an ultra-low reflectance less than 0.16% and an absorption efficiency greater than 99.84%. The index of refraction and the absorption constant are controlled by independently varying the nanotube diameter and nanotube spacing. The nanotubes are mostly double-walled. The density of the nanotube arrays is very low, around 0.015 g/cm3.Type: ApplicationFiled: November 12, 2008Publication date: May 21, 2009Inventors: Shawn-Yu Lin, James A. Bur, Zu-Po Yang, Lijie Ci, Pulickel M. Ajayan
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Patent number: 7079309Abstract: An optical amplifier having a uniform gain profile uses a photonic crystal to tune the density-of-states of a gain medium so as to modify the light emission rate between atomic states. The density-of-states of the gain medium is tuned by selecting the size, shape, dielectric constant, and spacing of a plurality of microcavity defects in the photonic crystal. The optical amplifier is particularly useful for the regeneration of DWDM signals in long optical fibers.Type: GrantFiled: June 25, 2003Date of Patent: July 18, 2006Assignee: Sandia CorporationInventors: Shawn-Yu Lin, James G. Fleming, Ihab El-Kady
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Patent number: 6869330Abstract: A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.Type: GrantFiled: January 23, 2003Date of Patent: March 22, 2005Assignee: Sandia CorporationInventors: James M. Gee, Shawn-Yu Lin, James G. Fleming, James B. Moreno
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Patent number: 6812482Abstract: A new class of processes suited to the fabrication of layered material compositions is disclosed. Layered material compositions are typically three-dimensional structures which can be decomposed into a stack of structured layers. The best known examples are the photonic lattices. The present invention combines the characteristic features of photolithography and chemical-mechanical polishing to permit the direct and facile fabrication of, e.g., photonic lattices having photonic bandgaps in the 0.1-20&mgr; spectral range.Type: GrantFiled: August 28, 2001Date of Patent: November 2, 2004Assignee: Sandia CorporationInventors: James G. Fleming, Shawn-Yu Lin
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Patent number: 6807353Abstract: A microfabricated Bragg waveguide of semiconductor-compatible material having a hollow core and a multilayer dielectric cladding can be fabricated by integrated circuit technologies. The microfabricated Bragg waveguide can comprise a hollow channel waveguide or a hollow fiber. The Bragg fiber can be fabricated by coating a sacrificial mandrel or mold with alternating layers of high- and low-refractive-index dielectric materials and then removing the mandrel or mold to leave a hollow tube with a multilayer dielectric cladding. The Bragg channel waveguide can be fabricated by forming a trench embedded in a substrate and coating the inner wall of the trench with a multilayer dielectric cladding. The thicknesses of the alternating layers can be selected to satisfy the condition for minimum radiation loss of the guided wave.Type: GrantFiled: December 19, 2001Date of Patent: October 19, 2004Assignee: Sandia CorporationInventors: James G. Fleming, Shawn-Yu Lin, G. Ronald Hadley
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Patent number: 6768256Abstract: A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.Type: GrantFiled: November 22, 2002Date of Patent: July 27, 2004Assignee: Sandia CorporationInventors: James G. Fleming, Shawn-Yu Lin, James A. Bur
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Patent number: 6674778Abstract: A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.Type: GrantFiled: January 9, 2002Date of Patent: January 6, 2004Assignee: Sandia CorporationInventors: Shawn-Yu Lin, Walter J. Zubrzycki
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Patent number: 6611085Abstract: A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.Type: GrantFiled: August 27, 2001Date of Patent: August 26, 2003Assignee: Sandia CorporationInventors: James M. Gee, Shawn-Yu Lin, James G. Fleming, James B. Moreno
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Publication number: 20030132705Abstract: A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.Type: ApplicationFiled: January 23, 2003Publication date: July 17, 2003Inventors: James M. Gee, Shawn-Yu Lin, James G. Fleming, James B. Moreno