Patents by Inventor Shaym G. Garg

Shaym G. Garg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reduction of filaments between electrodes
    Patent number: 4878996
    Abstract: The disclosure relates to a method for reducing filament formation over the BN+ oxide in semiconductor devices wherein a sidewall oxide is formed on the side walls of the first polysilicon layer prior to subsequent formation of the intermediate insulating layer, formation of a second polysilicon layer and subsequent anisotropic etch to provide for removal of all polysilicon over the field oxide.
    Type: Grant
    Filed: January 23, 1989
    Date of Patent: November 7, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Allan T. Mitchell, Howard L. Tigelaar, Shaym G. Garg, Kalipatnam V. Rao
  • Use of sidewall oxide to reduce filaments
    Patent number: 4806201
    Abstract: The disclosure relates to a method for reducing filament formation over the BN+ oxide in semiconductor devices wherein a sidewall oxide is formed on the side walls of the first polysilicon layer prior to subsequent formation of the intermediate insulating layer, formation of a second polysilicon layer and subsequent anisotropic etch to provide for removal of all polysilicon over the field oxide.
    Type: Grant
    Filed: March 21, 1988
    Date of Patent: February 21, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Allan T. Mitchell, Howard L. Tigelaar, Shaym G. Garg, Kalipatnam V. Rao