Patents by Inventor Shayu Li

Shayu Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof
    Patent number: 9454076
    Abstract: The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: September 27, 2016
    Assignee: INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES
    Inventors: Guoqiang Yang, Jian Xu, Li Chen, Shuangqing Wang, Shayu Li
  • MOLECULAR GLASS PHOTORESISTS CONTAINING BISPHENOL A FRAMEWORK AND METHOD FOR PREPARING THE SAME AND USE THEREOF
    Publication number: 20150037735
    Abstract: The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.
    Type: Application
    Filed: May 18, 2012
    Publication date: February 5, 2015
    Applicant: INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES
    Inventors: Guoqiang Yang, Jian Xu, Li Chen, Shuangqing Wang, Shayu Li