Abstract: The present invention provides a nickel-based superalloy material, which comprises 0.06 wt % or less carbon, 11.61˜11.93 wt % chromium, 1.52˜2.85 wt % titanium, 5.89˜6.08 wt % aluminum, 0.009 wt % or less boron, 0.07 wt % or less zirconium, 2.16˜2.18 wt % niobium, 4.22˜4.29 wt % molybdenum, and the balance being composed of nickel and incidental impurities, whereby the effect of obtaining the nickel-based superalloy with better mechanical properties can be achieved.

Abstract: A heating carrier device for use on a sputtering cathode assembly has a heating carrier for heating a sputtering target to control a sputtering target temperature; a magnetic component for generating a magnetic field; a thermal insulation component disposed between the heating carrier and the magnetic component; and a cooling system for cooling the magnetic component. Therefore, the heating carrier device reduces the bonding strength of the sputtering target, reduces the particle size of sputtering products, and grows high-quality, uniform thin films.

Abstract: Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 ?-cm; consequently.

Abstract: An organic light-emitting diode (OLED) comprises a transparent substrate, a first electrode, at least one organic functional layer, a second electrode, and a lid. The first electrode is disposed on the transparent substrate, the organic functional layer is disposed on the first electrode, the second electrode is disposed on the organic functional layer, and the lid is disposed above the second electrode. The lid has at least one heat-dissipating pin mounted on the lid. Furthermore, the lid is composed of a covering component and a heat-dissipating component. The covering component is disposed on or above the second electrode, and the heat-dissipating component is disposed on the covering component.

Abstract: A flat color-shift medium which is positioned on a backlight of an organic light-emitting source. The flat color-shift medium is made of uniformly mixed fluorescent materials, each of which has a specific dose ratio. Due to the microcosmic light-color mixing effect of the fluorescent materials, the flat color-shift medium could shift an original spectrum of shorter wavelength into a desired spectrum of longer wavelength.

Abstract: A process for producing a self-aligned contact comprises the steps of forming leads on a substrate, forming an etching stop layer on the leads by depositing, then forming a sacrificed oxide layer; after the structure of the leads is defined, a spacer is formed on both sides of the structure; a sacrificed oxide layer is formed, allowing the spacer to protrude in the form of horn. Next, a dielectric layer having a flat upper surface is deposited on the substrate and the structure of leads, a contact hole being formed between the leads so as to connect the substrate, a conductive material being filled in the contact hole to form a plug.

Abstract: A method of manufacturing a double gate oxide layer. A substrate has trenches that divide the substrate into a memory circuit region and a logic circuit region. A dielectric layer is formed on the substrate to fill the trenches. The dielectric layer of the logic region is removed, thereby exposing the substrate. An ion implantation step is performed on the substrate of the logic circuit region using a reverse tone mask. A conformal barrier layer is formed over the substrate. A spin-on layer is formed over the barrier layer. A chemical mechanical polishing step is performed to remove the in-on layer, the barrier layer, and dielectric layer outside the trenches, thereby exposing the substrate. A thermal oxidation step is performed to form a double gate oxide layer that is thicker in the logic circuit region than it is in the memory circuit region.