Abstract: Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

Abstract: Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

Abstract: A memory device detects and correct bit errors. The memory device includes cyclic redundancy check (CRC) and error correction code (ECC) circuits. The CRC circuit generates a write CRC code corresponding to data to be stored in memory cells. The ECC circuit generates an ECC code corresponding to the data and detecting and correcting a bit error of the data by means of the ECC code during a read operation. The CRC circuit generates a read CRC code corresponding to data corrected by the ECC circuit during the read operation, and detects a bit error of the data according to a comparison of the read CRC code and the write CRC code.

Abstract: Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

Abstract: Disclosed is a method for reading data in a memory system including a buffer memory and a nonvolatile memory, the method being comprised of: determining whether an input address in a read request is allocated to the buffer memory; determining whether a size of requested data is larger than a reference unless the input address is allocated to the buffer memory; and conducting a prefetch reading operation from the nonvolatile memory if the requested data size is larger than the reference.

Abstract: Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

Abstract: Disclosed is a method for reading data in a memory system including a buffer memory and a nonvolatile memory, the method being comprised of: determining whether an input address in a read request is allocated to the buffer memory; determining whether a size of requested data is larger than a reference unless the input address is allocated to the buffer memory; and conducting a prefetch reading operation from the nonvolatile memory if the requested data size is larger than the reference.

Abstract: A method is for recovering a block mapping table in a system including a flash memory device, where the block mapping table utilizes address mapping in accordance with a wear-leveling scheme. The method includes reading block arrangement information from the flash memory device for the wear-leveling scheme, restoring the block mapping table with reference to allocation block information included in the block arrangement information and scanning address allocation information included in spare regions of erased blocks of the flash memory device with reference to erased block information included in the block arrangement information and updating the block mapping table in accordance with the scanned address allocation information.

Abstract: Disclosed is a method for reading data in a memory system including a buffer memory and a nonvolatile memory, the method being comprised of: determining whether an input address in a read request is allocated to the buffer memory; determining whether a size of requested data is larger than a reference unless the input address is allocated to the buffer memory; and conducting a prefetch reading operation from the nonvolatile memory if the requested data size is larger than the reference.

Abstract: Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

Abstract: An embodiment of a data storage apparatus includes a storage medium, a flash memory buffer configured to store write data to be written in the storage medium, and a controller configured to compare the amount of unused space in the flash memory buffer to a first reference value, compare the amount of valid data in the flash memory buffer to a second reference value, and in response to the comparisons, conducts either a block reclaim operation on the flash memory buffer or a buffer flush operation to transfer valid data from the flash memory buffer to the storage medium. An embodiment of a method for managing a data storage apparatus includes determining when to perform a reclaim operation on a nonvolatile memory buffer, and performing the reclaim operation by moving data either physically or virtually within the nonvolatile memory buffer.

Abstract: A data storage system includes a non-volatile memory, a disc recording medium, a non-volatile memory buffer, operatively disposed between a host interface and the non-volatile memory, which stores a portion of data stored in the non-volatile memory, and a disc buffer, operatively disposed between the host interface and the disc recording medium, which stores a portion of data stored in the disc recording medium. The data storage system may be configured to receive an access address from a host operatively connected to the host interface, and sequentially determine whether the access address exists in one of the non-volatile memory buffer, the non-volatile memory, the disc buffer, and the disc recording medium, in that order.

Abstract: A data storage system includes a non-volatile memory, a disc recording medium, a non-volatile memory buffer, operatively disposed between a host interface and the non-volatile memory, which stores a portion of data stored in the non-volatile memory, and a disc buffer, operatively disposed between the host interface and the disc recording medium, which stores a portion of data stored in the disc recording medium. The data storage system may be configured to receive an access address from a host operatively connected to the host interface, and sequentially determine whether the access address exists in one of the non-volatile memory buffer, the non-volatile memory, the disc buffer, and the disc recording medium, in that order.

Abstract: Example embodiments provide a garbage collection method which includes applying a weight to each of at least two or more factors to calculate garbage collection costs. A hash table is configured using the calculated garbage collection costs. The method further includes searching a block having the lowest garbage collection cost from the hash table and performing garbage collection on the searched block.

Abstract: A data storage system includes a non-volatile memory, a disc recording medium, a non-volatile memory buffer, operatively disposed between a host interface and the non-volatile memory, which stores a portion of data stored in the non-volatile memory, and a disc buffer, operatively disposed between the host interface and the disc recording medium, which stores a portion of data stored in the disc recording medium. The data storage system may be configured to receive an access address from a host operatively connected to the host interface, and sequentially determine whether the access address exists in one of the non-volatile memory buffer, the non-volatile memory, the disc buffer, and the disc recording medium, in that order.

Abstract: A storage apparatus using a non-volatile memory, which retains data even after power interruption, as its cache and a method of managing the same are provided. The storage apparatus includes a main storage medium, a non-volatile memory used as a cache of the main storage medium, a region of the non-volatile memory being divided into a fixed region and a non-fixed region according to whether or not data is fixed, and a block management unit managing physical blocks by means of virtual addresses, the physical blocks being allocated to the non-volatile memory.

Abstract: Provided are a storage apparatus using a non-volatile memory as a cache and a method of operating the same, in which the non-volatile memory is used as the cache so as to preserve data even when electricity is interrupted. The storage apparatus using a non-volatile memory as a cache includes a main storage medium, the non-volatile memory being used as the cache of the main storage medium and having a stationary region and a non-stationary region divided according to whether data are fixed, and a block management unit managing blocks allocated in the non-volatile memory.

Abstract: Disclosed is a method for reading data in a memory system including a buffer memory and a nonvolatile memory, the method being comprised of: determining whether an input address in a read request is allocated to the buffer memory; determining whether a size of requested data is larger than a reference unless the input address is allocated to the buffer memory; and conducting a prefetch reading operation from the nonvolatile memory if the requested data size is larger than the reference.

Abstract: A data storage system includes a non-volatile memory, a disc recording medium, a non-volatile memory buffer, operatively disposed between a host interface and the non-volatile memory, which stores a portion of data stored in the non-volatile memory, and a disc buffer, operatively disposed between the host interface and the disc recording medium, which stores a portion of data stored in the disc recording medium. The data storage system may be configured to receive an access address from a host operatively connected to the host interface, and sequentially determine whether the access address exists in one of the non-volatile memory buffer, the non-volatile memory, the disc buffer, and the disc recording medium, in that order.

Abstract: A memory card capable of having an increased number of meta blocks and a method of driving the memory card. A method of reading data from the memory card includes receiving logical addresses from a host. It is determined whether memory blocks corresponding to the received logical addresses belong to a first region allocated to a user data region in the memory card or a second region including meta blocks in the memory card. The memory blocks corresponding to the logical addresses are masked as erased blocks when the memory blocks belong to the second region.