Abstract: According to embodiments of the present invention, an electron device is provided. The electron device includes a support substrate, a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam, and a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate at only one or more support substrate portions overlapping with the conductive planar slow-wave structure. According to further embodiments of the present invention, a method for manufacturing an electron device is also provided.

Abstract: According to embodiments of the present invention, an electron device is provided. The electron device includes a support substrate, a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam, and a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate at only one or more support substrate portions overlapping with the conductive planar slow-wave structure. According to further embodiments of the present invention, a method for manufacturing an electron device is also provided.

Abstract: A planar helix slow-wave structure with straight edge connections where the structure consists of two arrays of thin, parallel, conductors printed on top and bottom faces of a low-loss dielectric material or substrate, the conductors in the arrays printed on the top and bottom surfaces being inclined at different but symmetric pitch angles on the surface of the planar surface, the conjunction ends of the conductors on the top and bottom faces being connected by vertical conductors with circular rings with a diameter greater than the diameter of the vertical conductors to ensure proper connections between them, and a vacuum tunnel inside the planar helix structure.

Abstract: A planar helix slow-wave structure with straight edge connections where the structure consists of two arrays of thin, parallel, conductors printed on top and bottom faces of a low-loss dielectric material or substrate, the conductors in the arrays printed on the top and bottom surfaces being inclined at different but symmetric pitch angles on the surface of the planar surface, the conjunction ends of the conductors on the top and bottom faces being connected by vertical conductors with circular rings with a diameter greater than the diameter of the vertical conductors to ensure proper connections between them, and a vacuum tunnel inside the planar helix structure.