Patents by Inventor Sheela Kollali Ramasesha

Sheela Kollali Ramasesha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8779283
    Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: July 15, 2014
    Assignee: General Electric Company
    Inventors: Sheela Kollali Ramasesha, Sundeep Kumar, Mohandas Nayak, Atanu Saha, Hemantkumar Narsinham Aiyer
  • Patent number: 7728499
    Abstract: Ceramic HID lamps with improved thermal management having an adherent infrared reflective coating layer located on the outer surface of the vessel are described. They include a coating of a nonmetallic material proximate the first and second end portions of the vessel. Such coatings can minimize temperature gradients during lamp operation. Methods for preparing such lamps with improved thermal management are described as well.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: June 1, 2010
    Assignee: General Electric Company
    Inventors: Preeti Singh, Mohamed Rahmane, Venkat Subramaniam Venkataramani, Balasubramaniam Vaidhyanathan, Gregory Michael Gratson, Sheela Kollali Ramasesha, Mohandas Nayak
  • Publication number: 20090194149
    Abstract: Low band gap semiconductor oxides include nanocrystalline porous particles doped with an anion selected from the group consisting of carbon, nitrogen, fluorine, and combinations thereof, wherein the doped nanocrystalline porous semiconductor oxide has a lower band gap energy relative to undoped semiconductor oxides. A combustion synthesis process is used to fabricate the low bang gap materials. Also disclosed herein are dye sensitized solar cells containing the doped semiconductor oxides.
    Type: Application
    Filed: February 4, 2008
    Publication date: August 6, 2009
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Nagaveni Karkada, Sheela Kollali Ramasesha
  • Publication number: 20090139573
    Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.
    Type: Application
    Filed: February 29, 2008
    Publication date: June 4, 2009
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Sheela Kollali Ramasesha, Sundeep Kumar, Mohandas Nayak, Atanu Saha, Hemantkumar Narsinham Aiyer
  • Publication number: 20090134759
    Abstract: Ceramic HID lamps with improved thermal management having an adherent infrared reflective coating layer located on the outer surface of the vessel are described. They include a coating of a nonmetallic material proximate the first and second end portions of the vessel. Such coatings can minimize temperature gradients during lamp operation. Methods for preparing such lamps with improved thermal management are described as well.
    Type: Application
    Filed: November 28, 2007
    Publication date: May 28, 2009
    Inventors: Preeti Singh, Mohamed RAHMANE, Venkat Subramaniam VENKATARAMANI, Balasubramaniam VAIDHYANATHAN, Gregory Michael GRATSON, Sheela Kollali RAMASESHA, Mohandas NAYAK
  • Publication number: 20080142755
    Abstract: A wafer processing apparatus, including a heater apparatus, is provided. The heater apparatus includes a coating layer; and a seal structure in contact with the coating layer. The seal structure is formed from a seal formable material. The seal formable material includes at least one of a YASB glassy composition, a CGYP glassy composition, or a combination of the YASB glassy composition and the CGYP glassy composition. A method and device are also included.
    Type: Application
    Filed: December 13, 2006
    Publication date: June 19, 2008
    Applicant: General Electric Company
    Inventors: Balasubramaniam Vaidhyanathan, Salil Mohan Joshi, Sheela Kollali Ramasesha, Mamatha Nagesh, Victor Lienkong Lou, George Theodore Dalakos, Michael John Wittbrodt, Dalong Zhong
  • Publication number: 20070224451
    Abstract: A composition is provided that is capable of forming an NZP or an NZP-type coating. The composition includes a first composition, a second composition, and a metal cation. The first composition and the second composition form a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms. The first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series. The second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum. The one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon. The first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12?x. The metal cation is disposed within an interstitial site defined by the crystalline structure.
    Type: Application
    Filed: August 11, 2006
    Publication date: September 27, 2007
    Applicant: General Electric Company
    Inventors: Ramachandran Gopi Chandran, Balasubramaniam Vaidhyanathan, Venkat Subramaniam Venkataramani, Victor Lienkong Lou, George Theodore Dalakos, Sheela Kollali Ramasesha
  • Publication number: 20070221132
    Abstract: A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C. is provided. The apparatus has an NZP or an NZP-type coating, which comprises a first composition, a second composition, and a metal cation. The first composition and the second composition form a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms. The first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series. The second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum. The one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon. The first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12-x. The metal cation is disposed within an interstitial site defined by the crystalline structure.
    Type: Application
    Filed: November 27, 2006
    Publication date: September 27, 2007
    Applicant: General Electric Company
    Inventors: Ramachandran Gopi Chandran, Balasubramaniam Vaidhyanathan, Venkat Subramaniam Venkataramani, Victor Lienkong Lou, George Theodore Dalakos, Sheela Kollali Ramasesha