Abstract: A method for forming an aperture in a semiconductor oxide layer to form an electrical interconnect (via or contact) for a multi-layer semiconductor circuit. This method allows preferential deposit of tungsten in the aperture but resists deposit of tungsten on the oxide exposed surface. Before the tungsten is deposited, a layer of a first phase of titanium nitride (or tungsten nitride), which promotes nucleation of tungsten thereon, is formed within the aperture; and an overlayer of a second phase of titanium nitride (or tungsten nitride), which resists nucleation of tungsten thereon, is formed on the oxide exposed surface. The tungsten is then deposited preferentially on the titanium nitride (or tungsten nitride) layer within the aperture, but not on the titanium nitride (or tungsten nitride) overlayer on the oxide layer. The overlayer of titanium nitride (or tungsten nitride) and part of all of the oxide layer may be removed to expose an electrical contact.