Abstract: Treatment of films by laser annealing; particularly for silicon films in magnetron sputtering and continuous plasma-enhanced chemical vapor deposition.

Abstract: Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.

Abstract: Preparation of amorphous semiconductor carbides that are suitable for use in a wide variety of devices by the pyrolytic decomposition of a mixture of one or more semiconductanes and one or more carbanes.

Abstract: Electrically conducting organic polymeric film material exhibiting a preselected room temperature n-type electrical conductivity ranging from that characteristic of semiconductor behavior to that characteristic of metallic behavior, is prepared by controlled electron donor doping of a polycrystalline film of polyacetylene with a metal dopant whose Pauling electronegativity value is no greater than 1.6. Preferred metal dopants are the alkali metals. The procedure may be employed in preparing polyacetylene film with a p-n junction formed by two adjacent portions of the film respectively provided wth p-type and n-type electrical conductivities.