Abstract: Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; an RF rotary joint coupled to the pedestal and having a RF connector; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal; an insulator tube disposed about the RF conduit; and a ground tube disposed about the insulator tube and extending from the RF rotary joint to the pedestal, wherein the insulator tube extends vertically above an upper surface of the ground tube.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

Abstract: A method and apparatus for performing post-exposure bake cooling operations is described herein. The method begins by post exposure baking a substrate disposed on heated substrate support in a process chamber, the process chamber having a showerhead. The heated substrate support is moved to increase a distance between the heated substrate support and a cooled plate of the showerhead. The substrate is separated from the heated substrate support using a substrate lifting device. The substrate is moved into a close proximity to the cooled showerhead. The substrate is cooled until the substrate is less than about 70 degrees Celsius. The substrate is spaced away from the cooled showerhead using the substrate lifting device and aligning the substrate with a substrate transfer passage of the processing chamber for removal by a robot.

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

Abstract: Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.