Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material and spaced apart first and second contact means or electrodes in contact with said material. A multilayer dielectric comprises a first dielectric layer having a thickness of 200 nm to 500 nm, in contact with the gate electrode and a second dielectric layer in contact with the organic semiconductor material, and wherein the first dielectric layer comprise a continuous first polymeric material having a relatively higher dielectric constant less than 10 and the second dielectric layer comprises a continuous second non-fluorinated polymeric material having a relatively lower dielectric constant greater than 2.3. Further disclosed is a process for fabricating such a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A novel method of fabricating the channel ends of an ink jet printhead: lithographically fabricating channels in photopolymer having the channel end blocked by a thin layer of photopolymer; sandwiching the photopolymer between two parallel substrates, one of which has an actuator for each channel; dicing through the substrates on a line perpendicular to the channels and leaving the channels and solid wall at the end of the channels intact; optionally coating the diced face including the polymer wall blocking the channel ends with a hydrophobic material; and forming nozzles in the end of the channels by laser ablating through the polymer layer at the end of the channel. Forming the nozzles after dicing and the optional coating prevents contamination of the interior of the printhead. The nozzles can be recessed from the diced edges of the substrate. Photolithographic formation of the end of the channel insures an accurate distance is maintained between the nozzle and the actuator.

Abstract: A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.