Patents by Inventor Shen Chang

Shen Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11965187
    Abstract: A targeted DNA demethylation method (Mini-CRISD) and a fusion protein used in the method are provided. The Mini-CRISD method can targets delivery of demethylation activity through engineered miniature dCjCas9 to deliver engineered miniature ROS1 demethylation effector to specific DNA sequences and/or specific genomic locations (such as CpG islands) to achieve targeted demethylation of specific DNA.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: April 23, 2024
    Assignees: GUANGZHOU MEDICAL UNIVERSITY, GMU NEW DRUG DEVELOPMENT CO., LTD.
    Inventors: Xi-Yong Yu, Yu-Guang Zhu, Ao Shen, Ling-Min Zhang, Ji-Shuo Chang
  • Patent number: 11968908
    Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Yen Peng, Hui-Hsien Wei, Han-Ting Lin, Sin-Yi Yang, Yu-Shu Chen, An-Shen Chang, Qiang Fu, Chen-Jung Wang
  • Publication number: 20240120444
    Abstract: A light-emitting device includes a substrate, a semiconductor epitaxial structure, and an etch stop layer. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure has a side surface that has a roughened structure formed with protrusions, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer disposed on the first surface of the substrate in such order. The etch stop layer is disposed on a surface of the semiconductor epitaxial structure away from the substrate for preventing an etching solution from etching the semiconductor epitaxial structure. A light-emitting package and a light-emitting apparatus are also provided. A method for manufacturing a light-emitting device is also provided.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Wuqi SHEN, Die HU, Shaohua WU, Lingfei WANG, Zhendong NING, Chen Kang HSIEH, Chun-I CHANG, Duxiang WANG
  • Publication number: 20240078370
    Abstract: Various techniques are disclosed for automatically generating sub-cells for a non-final layout of an analog integrated circuit. Device specifications and partition information for the analog integrated circuit is received. Based on the device specifications and the partition information, first cut locations for a first set of cuts to be made along a first direction of a non-final layout of the analog integrated circuit and second cut locations for a second set of cuts to be made along a second direction in the non-final layout are determined. The first set of cuts are made in the non-final layout at the cut locations to produce a temporary layout. The second set of cuts are made in the temporary layout at the cut locations to produce a plurality of sub-cells.
    Type: Application
    Filed: August 10, 2023
    Publication date: March 7, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Chang, Wen-Shen Chou, Yung-Chow Peng, Yung-Hsu Chuang, Yu-Tao Yang, Bindu Madhavi Kasina
  • Patent number: 11908939
    Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: February 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia Tai Lin, Yih-Ann Lin, An-Shen Chang, Ryan Chen, Chao-Cheng Chen
  • Patent number: 11856869
    Abstract: The present disclosure provides a semiconductor structure, including a first metal line over a first region of the substrate, a first magnetic tunnel junction (MTJ) and a second MTJ over the first region of the substrate, and a top electrode extending over the first MTJ and the second MTJ, wherein the top electrode includes a protruding portion at a bottom surface of the top electrode.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Han-Ting Tsai, Qiang Fu, Chung-Te Lin
  • Patent number: 11811145
    Abstract: An antenna module includes an antenna box and a first connection wire. The antenna box can include a first antenna, a second antenna, a first connection terminal, a second connection terminal and a housing. The first and second antennas are located in the housing and the housing has a first opening collectively exposing a portion of the first connection terminal and a portion of the second connection terminal. Each of the first and second antennas is adapted to receive or transmit wireless signals according to one of a plurality of wireless communication standards and the first and second antennas are electrically connected to the first and second connection terminals, respectively. The wireless communication standards can be different from each other.
    Type: Grant
    Filed: October 17, 2022
    Date of Patent: November 7, 2023
    Assignee: TAOGLAS GROUP HOLDINGS LIMITED
    Inventors: Tsai-Yi Yang, Yung-Sheng Tseng, Bo-Yuan Chang, Sheng-Shen Chang, Yu-Hua Chen, Shih-Shih Chien, En-Chin Wei
  • Publication number: 20230350181
    Abstract: A microscopic observation method configured to observe a specimen in a specimen carrier that includes the following steps: placing the specimen carrier at an observation point; obtaining a length of the specimen carrier along a movement direction, a thickness of the specimen carrier along an observation direction of a microscope objective, an observation angle of the microscope objective, and a relative distance between a lateral surface of the specimen carrier and the microscope objective along the movement direction; and adjusting an incident angle of a light beam emitted from a dark-field illumination towards the specimen carrier according to a calculation result of the length, the thickness, the observation angle, and the relative distance.
    Type: Application
    Filed: April 27, 2022
    Publication date: November 2, 2023
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Sheng-Li CHANG, Chi Shen CHANG, Chih-Cheng HSU
  • Publication number: 20230329123
    Abstract: A memory array device includes an array of memory cells located over a substrate, a memory-level dielectric layer laterally surrounding the array of memory cells, and top-interconnection metal lines laterally extending along a horizontal direction and contacting a respective row of top electrodes within the memory cells. Top electrodes of the memory cells are planarized to provide top surfaces that are coplanar with the top surface of the memory-level dielectric layer. The top-interconnection metal lines do not extend below the horizontal plane including the top surface of the memory-level dielectric layer, and prevent electrical shorts between the top-interconnection metal lines and components of memory cells.
    Type: Application
    Filed: June 16, 2023
    Publication date: October 12, 2023
    Inventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Qiang Fu, Chung-Te Lin, Han-Ting Tsai
  • Patent number: 11730548
    Abstract: An OCT scanning probe includes a tubular housing, at least one electrode, an optical fiber scanner and an auxiliary localization component. The electrode is disposed on an outer surface of the tubular housing. The optical fiber scanner is disposed in the tubular housing and includes an optical fiber and an optical element. The optical element is disposed on an emitting end of the optical fiber and at corresponding position to a light transmittable portion of the tubular housing. The auxiliary localization component is disposed on the tubular housing, and overlaps part of the light transmittable portion. A light beam emitted from the optical fiber scanner passes through the light transmittable portion to obtain a tomographic image. An interaction of the light beam with the auxiliary localization component causes a characteristic in the tomographic image, with the characteristic corresponding to the auxiliary localization component.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: August 22, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: De Yi Chiou, Kai-Hsiang Chen, Chi Shen Chang
  • Publication number: 20230255120
    Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
    Type: Application
    Filed: April 18, 2023
    Publication date: August 10, 2023
    Inventors: Tai-Yen Peng, Yu-Feng Yin, An-Shen Chang, Han-Ting Tsai, Qiang Fu
  • Patent number: 11723284
    Abstract: A memory array device includes an array of memory cells located over a substrate, a memory-level dielectric layer laterally surrounding the array of memory cells, and top-interconnection metal lines laterally extending along a horizontal direction and contacting a respective row of top electrodes within the memory cells. Top electrodes of the memory cells are planarized to provide top surfaces that are coplanar with the top surface of the memory-level dielectric layer. The top-interconnection metal lines do not extend below the horizontal plane including the top surface of the memory-level dielectric layer, and prevent electrical shorts between the top-interconnection metal lines and components of memory cells.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: August 8, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Han-Ting Tsai, Qiang Fu, Chung-Te Lin
  • Publication number: 20230235143
    Abstract: A recyclable crosslinked polymeric foam includes a reaction product of 0.1 to 10 parts by weight of a crosslinking agent and 0.1 to 5 parts by weight of a radical initiator, based on 100 parts by weight of a polymeric material. The crosslinking agent is represented by the following formula: wherein R is an alkylene group having 2 to 10 carbon atoms, an arylene group having 6 to 18 carbon atoms, or a cycloalkylene group having 6 to 18 carbon atoms.
    Type: Application
    Filed: January 24, 2022
    Publication date: July 27, 2023
    Applicant: USI Corporation
    Inventors: Yung-Shen CHANG, Chun-Fan HSIEH, Yu-Hsiang LIN
  • Patent number: 11665977
    Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: May 30, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen Peng, Yu-Feng Yin, An-Shen Chang, Han-Ting Tsai, Qiang Fu
  • Publication number: 20230127319
    Abstract: An optical probe includes a cylindrical lens adapted to receive and transmit incident light. A light-emitting surface of the cylindrical lens is a curved end surface having a concentric ring-shaped diffractive microstructure. A working position of the optical probe is a position where a diffraction order is 1 when the incident light having a design wavelength between a first wavelength and a second wavelength passes through the diffractive microstructure. When passing through the cylindrical lens, the incident light having the first wavelength produces a diffraction effect with the diffractive microstructure and is converged at a first wavelength working position approximately the same as the working position of the optical probe with the diffraction order of 1. After being refracted by the curved end surface, the incident light having the second wavelength is converged at a second wavelength working position approximately the same as the working position of the optical probe.
    Type: Application
    Filed: December 20, 2021
    Publication date: April 27, 2023
    Applicant: Industrial Technology Research Institute
    Inventors: Chy-Lin Wang, Chi-Shen Chang, Yuan-Chin Lee
  • Publication number: 20230123293
    Abstract: An antenna module includes an antenna box and a first connection wire. The antenna box can include a first antenna, a second antenna, a first connection terminal, a second connection terminal and a housing. The first and second antennas are located in the housing and the housing has a first opening collectively exposing a portion of the first connection terminal and a portion of the second connection terminal. Each of the first and second antennas is adapted to receive or transmit wireless signals according to one of a plurality of wireless communication standards and the first and second antennas are electrically connected to the first and second connection terminals, respectively. The wireless communication standards can be different from each other.
    Type: Application
    Filed: October 17, 2022
    Publication date: April 20, 2023
    Inventors: Tsai-Yi Yang, Yung-Sheng Tseng, Bo-Yuan Chang, Sheng-Shen Chang, Yu-Hua Chen, Shih-Shih Chien, En-Chin Wei
  • Patent number: 11606226
    Abstract: An example method for a programmable infrastructure gateway for enabling hybrid cloud services in a network environment is provided and includes receiving an instruction from a hybrid cloud application executing in a private cloud, interpreting the instruction according to a hybrid cloud application programming interface, and executing the interpreted instruction in a public cloud using a cloud adapter. The method is generally executed in the infrastructure gateway including a programmable integration framework allowing generation of various cloud adapters using a cloud adapter software development kit, the cloud adapter being generated and programmed to be compatible with a specific public cloud platform of the public cloud.
    Type: Grant
    Filed: April 2, 2021
    Date of Patent: March 14, 2023
    Assignee: Cisco Technology, Inc.
    Inventors: Nagaraj A. Bagepalli, David Wei-Shen Chang, Abhijit Patra, Murali Anantha, Prashanth Thumbargudi
  • Patent number: 11583169
    Abstract: An optical fiber scanning probe includes a rotor and at least one optical fiber. The rotor includes a torque rope rotatable about its central axis. The optical fiber is disposed on the rotor and eccentric relative to the torque rope. A central axis of the optical fiber is substantially parallel to the central axis of the torque rope. When the torque rope rotates about its central axis, the rotor brings a free end of the optical fiber to scan along an arc path.
    Type: Grant
    Filed: August 7, 2020
    Date of Patent: February 21, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chun-Chieh Huang, Yuan Chin Lee, Chi Shen Chang, Hung Chih Chiang
  • Patent number: 11545619
    Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: January 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsing-Hsiang Wang, Han-Ting Lin, Yu-Feng Yin, Sin-Yi Yang, Chen-Jung Wang, Yin-Hao Wu, Kun-Yi Li, Meng-Chieh Wen, Lin-Ting Lin, Jiann-Horng Lin, An-Shen Chang, Huan-Just Lin
  • Patent number: D1018537
    Type: Grant
    Filed: November 7, 2023
    Date of Patent: March 19, 2024
    Assignee: HTC CORPORATION
    Inventors: Shu-Kuen Chang, Natalia Amijo, Ian James McGillivray, Chin-Wei Chou, Yi-Shen Wang, Chih-Sung Fang, Hung-Yu Chen