Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma.

Abstract: A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.